Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A suitable for drives
Key Attributes
Model Number:
IKD06N60RF
Product Custom Attributes
Pd - Power Dissipation:
100W
Td(off):
106ns
Td(on):
7ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
470pF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@0.11mA
Gate Charge(Qg):
48nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
48ns
Switching Energy(Eoff):
90uJ
Turn-On Energy (Eon):
90uJ
Mfr. Part #:
IKD06N60RF
Package:
TO-252
Product Description
Product Description
The IKD06N60RF is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications up to 30 kHz. It offers space-saving advantages and features optimized switching losses (Eon, Eoff, Qrr), smooth switching performance for low EMI, and a maximum junction temperature of 175C. This IGBT is suitable for domestic and industrial drives, including compressors, pumps, and fans.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP RC-Series
- Lead Plating: Pb-free
- RoHS Compliant: Yes
- MSL Rating: 1
- Certifications: Qualified according to JEDEC for target applications
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKD06N60RF | 600V | 6A | 2.2V | 175C | K06R60F | PG-TO252-3 |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, Tc = 25C | IC | 12.0 | A |
| DC collector current, Tc = 100C | IC | 6.0 | A |
| Pulsed collector current | ICpuls | 18.0 | A |
| Diode forward current, Tc = 25C | IF | 12.0 | A |
| Diode forward current, Tc = 100C | IF | 6.0 | A |
| Diode pulsed current | IFpuls | 18.0 | A |
| Gate-emitter voltage | VGE | 20 | V |
| Short circuit withstand time | tSC | 5 | s |
| Power dissipation, Tc = 25C | Ptot | 100.0 | W |
| Operating junction temperature | Tvj | -40...+175 | C |
| Storage temperature | Tstg | -55...+150 | C |
| Soldering temperature | 260 | C |
Thermal Resistance
| Parameter | Symbol | Conditions | Unit | Value |
| IGBT thermal resistance, junction - case | Rth(j-c) | K/W | 1.50 | |
| Diode thermal resistance, junction - case | Rth(j-c) | K/W | 3.60 | |
| Thermal resistance, min. footprint junction - ambient | Rth(j-a) | K/W | 75 | |
| Thermal resistance, 6cm Cu on PCB junction - ambient | Rth(j-a) | K/W | 50 |
Electrical Characteristics (Tvj = 25C, unless otherwise specified)
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | V | 600 | - | - |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 6.0A, Tvj = 25C | V | - | 2.20 | - |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 6.0A, Tvj = 175C | V | - | 2.30 | 2.50 |
| Diode forward voltage | VF | VGE = 0V, IF = 6.0A, Tvj = 25C | V | - | 2.10 | - |
| Diode forward voltage | VF | VGE = 0V, IF = 6.0A, Tvj = 175C | V | - | 2.00 | 2.40 |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.11mA, VCE = VGE | V | 4.3 | 5.0 | 5.7 |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 25C | A | - | - | 40 |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 175C | A | - | - | 1000 |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | nA | - | - | 100 |
| Transconductance | gfs | VCE = 20V, IC = 6.0A | S | - | 2.9 | - |
Dynamic Characteristics (Tvj = 25C, unless otherwise specified)
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | pF | - | 470 | - |
| Output capacitance | Coes | pF | - | 24 | - | |
| Reverse transfer capacitance | Cres | pF | - | 14 | - | |
| Gate charge | QG | VCC = 480V, IC = 6.0A, VGE = 15V | nC | - | 48.0 | - |
| Internal emitter inductance | LE | measured 5mm from case | nH | - | 7.0 | - |
| Short circuit collector current | IC(SC) | VGE = 15.0V, VCC 400V, tSC 5s, Tvj = 25C | A | - | 46 | - |
Switching Characteristics, Inductive Load (Tvj = 25C)
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Turn-on delay time | td(on) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG(on) = 23.0, RG(off) = 23.0, L = 50nH, C = 30pF | ns | - | 7 | - |
| Rise time | tr | ns | - | 8 | - | |
| Turn-off delay time | td(off) | ns | - | 106 | - | |
| Fall time | tf | ns | - | 22 | - | |
| Turn-on energy | Eon | mJ | - | 0.09 | - | |
| Turn-off energy | Eoff | mJ | - | 0.09 | - | |
| Total switching energy | Ets | mJ | - | 0.18 | - | |
| Diode reverse recovery time | trr | VR = 400V, IF = 6.0A, diF/dt = 770A/s | ns | - | 48 | - |
| Diode reverse recovery charge | Qrr | C | - | 0.16 | - | |
| Diode peak reverse recovery current | Irrm | A | - | 7.4 | - | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | A/s | - | -195 | - |
Switching Characteristics, Inductive Load (Tvj = 175C)
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Turn-on delay time | td(on) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG(on) = 23.0, RG(off) = 23.0, L = 50nH, C = 30pF | ns | - | 8 | - |
| Rise time | tr | ns | - | 8 | - | |
| Turn-off delay time | td(off) | ns | - | 115 | - | |
| Fall time | tf | ns | - | 35 | - | |
| Turn-on energy | Eon | mJ | - | 0.15 | - | |
| Turn-off energy | Eoff | mJ | - | 0.13 | - | |
| Total switching energy | Ets | mJ | - | 0.28 | - | |
| Diode reverse recovery time | trr | VR = 400V, IF = 6.0A, diF/dt = 770A/s | ns | - | 74 | - |
| Diode reverse recovery charge | Qrr | C | - | 0.34 | - | |
| Diode peak reverse recovery current | Irrm | A | - | 10.3 | - | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | A/s | - | -177 | - |
2410121815_Infineon-IKD06N60RF_C536170.pdf
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