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quality EconoPIM3 Module Infineon FP200R12N3T7 with Low Thermal Resistance and Overload Operation up to 175C factory
quality EconoPIM3 Module Infineon FP200R12N3T7 with Low Thermal Resistance and Overload Operation up to 175C factory

EconoPIM3 Module Infineon FP200R12N3T7 with Low Thermal Resistance and Overload Operation up to 175C

Key Attributes
Model Number: FP200R12N3T7
Product Custom Attributes
Td(off):
351ns
Td(on):
203ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.14nF
Input Capacitance(Cies):
40.3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@4.6mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
400A
Switching Energy(Eoff):
12.9mJ
Turn-On Energy (Eon):
25.1mJ
Mfr. Part #:
FP200R12N3T7
Package:
Through Hole,122x62.5mm
Product Description

Product Description

The EconoPIM3 module features the 7th generation TRENCHSTOP IGBT7 and the 7th generation Emitter Controlled Diode with integrated NTC temperature sensing. It is designed for applications requiring high performance and reliability, offering advantages such as low VCEsat and overload operation up to 175C. The module utilizes a copper base plate and an Al2O3 substrate for low thermal resistance. It is suitable for auxiliary inverters, motor drives, and servo drives.

Product Attributes

  • Brand: Infineon
  • Product Line: EconoPIM3
  • Model: FP200R12N3T7
  • Certifications: Compliant with relevant tests according to IEC 60747, 60749, and 60068 standards for industrial applications.

Technical Specifications

Component Parameter Symbol Condition Value Unit
IGBT, Inverter Collector-Emitter Voltage VCES Tvj = 25 C 1200 V
Continuous Collector DC Current ICDC Tvj max = 175 C, TC = 70 C 200 A
Collector Repetitive Peak Current ICRM tp limited by Tvj op 400 A
Gate-Emitter Peak Voltage VGES 20 V
Collector-Emitter Saturation Voltage VCEsat IC = 200 A, VGE = 15 V, Tvj = 25 C 1.55 - 1.80 V
Gate Threshold Voltage VGEth IC = 4.6 mA, VCE = VGE, Tvj = 25 C 5.15 - 6.45 V
Gate Charge QG VGE = 15 V, VCC = 600 V 3.34 C
Turn-on Delay Time (inductive load) tdon IC = 200 A, VCC = 600 V, VGE = 15 V, RGon = 2.7 , Tvj = 25 C 0.203 s
Turn-off Delay Time (inductive load) tdoff IC = 200 A, VCC = 600 V, VGE = 15 V, RGoff = 2.7 , Tvj = 25 C 0.351 s
Turn-on Energy (per pulse) Eon IC = 200 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGon = 2.7 , di/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C 25.1 mJ
Turn-off Energy (per pulse) Eoff IC = 200 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGoff = 2.7 , dv/dt = 3250 V/s (Tvj = 175 C), Tvj = 25 C 12.9 mJ
Junction-to-Case Thermal Resistance RthJC per IGBT 0.231 K/W
Diode, Inverter Repetitive Peak Reverse Voltage VRRM Tvj = 25 C 1200 V
Continuous Forward DC Current IF 200 A
Forward Peak Current IFRM tp = 1 ms 400 A
I2t Value I2t tp = 10 ms, VR = 0 V, Tvj = 125 C 3700 As
Forward Voltage VF IF = 200 A, VGE = 0 V, Tvj = 25 C 1.72 - 2.10 V
Peak Reverse Recovery Current IRM VCC = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C 79.6 A
Repetitive Recovery Charge Qr VCC = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C 15.7 C
Junction-to-Case Thermal Resistance RthJC per diode 0.376 K/W
Diode, Rectifier Repetitive Peak Reverse Voltage VRRM Tvj = 25 C 1600 V
Max. RMS Current (per chip) IFRMSM TC = 110 C 150 A
Max. Rectifier Output RMS Current IRMSM TC = 110 C 150 A
Forward Surge Current IFSM tp = 10 ms, Tvj = 25 C 1800 A
I2t Value I2t tp = 10 ms, Tvj = 25 C 16200 As
Forward Voltage VF IF = 200 A, Tvj = 150 C 1.02 V
Junction-to-Case Thermal Resistance RthJC per diode 0.278 K/W
IGBT, Brake Chopper Collector-Emitter Voltage VCES Tvj = 25 C 1200 V
Continuous Collector DC Current ICDC Tvj max = 175 C, TC = 75 C 150 A
Collector Repetitive Peak Current ICRM tp limited by Tvj op 300 A
Gate-Emitter Peak Voltage VGES 20 V
Collector-Emitter Saturation Voltage VCEsat IC = 150 A, VGE = 15 V, Tvj = 25 C 1.55 - 1.80 V
Gate Threshold Voltage VGEth IC = 3.5 mA, VCE = VGE, Tvj = 25 C 5.15 - 6.45 V
Gate Charge QG VGE = 15 V, VCC = 600 V 2.5 C
Turn-on Delay Time (inductive load) tdon IC = 150 A, VCC = 600 V, VGE = 15 V, RGon = 5.6 , Tvj = 25 C 0.197 s
Turn-off Delay Time (inductive load) tdoff IC = 150 A, VCC = 600 V, VGE = 15 V, RGoff = 5.6 , Tvj = 25 C 0.419 s
Turn-on Energy (per pulse) Eon IC = 150 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGon = 5.6 , di/dt = 1150 A/s (Tvj = 175 C), Tvj = 25 C 12.2 mJ
Turn-off Energy (per pulse) Eoff IC = 150 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGoff = 5.6 , dv/dt = 3100 V/s (Tvj = 175 C), Tvj = 25 C 10.5 mJ
Junction-to-Case Thermal Resistance RthJC per IGBT 0.290 K/W
Module Insulation Test Voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV
Creepage Distance dCreep Terminals to heatsink 10.0 mm
Clearance dClear Terminals to heatsink 7.5 mm

2504101957_Infineon-FP200R12N3T7_C42547889.pdf

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