Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed switching applications
Key Attributes
Model Number:
JNG10T65DJS1
Product Custom Attributes
Pd - Power Dissipation:
100W
Td(off):
71ns
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
10pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
28nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
57ns
Switching Energy(Eoff):
170uJ
Turn-On Energy (Eon):
180uJ
Input Capacitance(Cies):
670pF
Pulsed Current- Forward(Ifm):
30A
Output Capacitance(Coes):
37pF
Mfr. Part #:
JNG10T65DJS1
Package:
TO-252-2L
Product Description
JNG10T65DJS1 IGBT
The JNG10T65DJS1 is a 650V, 10A IGBT designed for high-speed switching applications. It offers high system efficiency, particularly beneficial for motor control, and features soft current turn-off waveforms. This IGBT is suitable for motor drives and home appliances.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Model: JNG10T65DJS1
- Package: TO-252-2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VCES | 650 | V | |||
| VGES | ±20 | V | ||||
| IC (TC=25) | 20 | A | ||||
| IC (TC=100) | 10 | A | ||||
| ICM (Note 1) | 30 | A | ||||
| IF (TC=100) | 10 | A | ||||
| IFM (Note 1) | 30 | A | ||||
| Thermal Characteristics | Rth j-c (IGBT) | 1.5 | / W | |||
| Rth j-c (Diode) | 2.0 | / W | ||||
| Rth j-a | 62 | / W | ||||
| Electrical Characteristics (TC=25 unless otherwise noted) | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| ICES | VCE= 650V, VGE= 0V | - | - | 50 | uA | |
| IGES (Forward) | VGE=20V, VCE= 0V | - | - | 100 | nA | |
| IGES (Reverse) | VGE= -20V, VCE= 0V | - | - | -100 | nA | |
| VGE(th) | VGE= VCE, IC= 250uA | 5.2 | 5.8 | 6.4 | V | |
| VCE(sat) | VGE=15V, IC= 10A | - | 1.8 | 2.2 | V | |
| Cies | VCE=30V VGE=0V f = 1MHz | - | 670 | - | pF | |
| Coes | - | 37 | - | pF | ||
| Cres | - | 10 | - | pF | ||
| Qg | VCC=520V VGE=15V IC=10A | - | 28 | - | nC | |
| Switching Characteristics (Inductive Load) | t d(on) (TC=25 ) | VCC=400V VGE=0/15V IC=10A RG=10 | - | 12 | - | ns |
| t r (TC=25 ) | - | 11 | - | ns | ||
| t d(off) (TC=25 ) | - | 71 | - | ns | ||
| t f (TC=25 ) | - | 74 | - | ns | ||
| Eon (TC=25 ) | - | 0.18 | - | mJ | ||
| Eoff (TC=25 ) | - | 0.17 | - | mJ | ||
| Switching Characteristics (Inductive Load) | t d(on) (TC=150 ) | VCC=400V VGE=0/15V IC=10A RG=10 | - | 10 | - | ns |
| t r (TC=150 ) | - | 12 | - | ns | ||
| t d(off) (TC=150 ) | - | 86 | - | ns | ||
| t f (TC=150 ) | - | 112 | - | ns | ||
| Eon (TC=150 ) | - | 0.21 | - | mJ | ||
| Eoff (TC=150 ) | - | 0.25 | - | mJ | ||
| Diode Electrical Characteristics (TC=25 unless otherwise noted) | VF | IF=10A | - | 1.4 | 1.8 | V |
| trr | VCE = 400V IF= 10A dIF/dt = -750A/us | - | 57 | - | ns | |
| IRRM | - | 12 | - | A | ||
| Qrr | - | 411 | - | nC | ||
| Diode Electrical Characteristics (TC=150 unless otherwise noted) | VF | IF=10A | - | 1.2 | - | V |
| trr | VCE = 400V IF= 10A dIF/dt = -750A/us | - | 118 | - | ns | |
| IRRM | - | 13 | - | A | ||
| Qrr | - | 728 | - | nC |
2509021810_JIAENSEMI-JNG10T65DJS1_C51484239.pdf
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