IGBT Module Infineon FS50R12KT3 EconoPACK2 1200 Volt 50 Amp Collector Emitter Current
Key Attributes
Model Number:
FS50R12KT3
Product Custom Attributes
Pd - Power Dissipation:
280W
Td(off):
420ns
Td(on):
90ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@2mA
Operating Temperature:
-40℃~+125℃
Gate Charge(Qg):
0.47uC
Pulsed Current- Forward(Ifm):
100A
Switching Energy(Eoff):
5.5mJ
Turn-On Energy (Eon):
5mJ
Mfr. Part #:
FS50R12KT3
Product Description
Product Overview
The EconoPACK2 module features a fast trench/fieldstop IGBT3 and an Emitter Controlled High Efficiency diode, designed for inverter applications. It offers high performance and efficiency in a compact module format.
Product Attributes
- Brand: EconoPACK2
- Model: FS50R12KT3
- Type: IGBT Module
- Preparation Date: 2013-10-03
- Revision: 2.1
- Data Status: Preliminary Data
Technical Specifications
| Parameter | Unit | IGBT, Inverter | Diode, Inverter | Module | NTC Thermistor |
| Collector-emitter voltage (VCES) | V | 1200 | |||
| Continuous DC collector current (IC) | A | 50 (TC=80C) / 75 (TC=25C) | |||
| Repetitive peak collector current (ICRM) | A | 100 (tP = 1 ms) | |||
| Total power dissipation (Ptot) | W | 280 (TC=25C) | |||
| Gate-emitter peak voltage (VGES) | V | +/-20 | |||
| Collector-emitter saturation voltage (VCE sat) | V | 1.70 - 2.15 (IC=50A, VGE=15V) | |||
| Gate threshold voltage (VGEth) | V | 5.0 - 6.5 (IC=2.00mA) | |||
| Gate charge (QG) | C | 0.47 (VGE = -15V ... +15V) | |||
| Internal gate resistor (RGint) | 4.0 (Tvj = 25C) | ||||
| Input capacitance (Cies) | nF | 3.50 (f=1MHz) | |||
| Reverse transfer capacitance (Cres) | nF | 0.13 (f=1MHz) | |||
| Collector-emitter cut-off current (ICES) | mA | 5.0 (VCE=1200V) | |||
| Gate-emitter leakage current (IGES) | nA | 400 (VGE=20V) | |||
| Turn-on delay time (td on) | s | 0.09 (IC=50A, VCE=600V, Tvj=25C) / 0.09 (Tvj=125C) | |||
| Rise time (tr) | s | 0.03 (IC=50A, VCE=600V, Tvj=25C) / 0.05 (Tvj=125C) | |||
| Turn-off delay time (td off) | s | 0.42 (IC=50A, VCE=600V, Tvj=25C) / 0.52 (Tvj=125C) | |||
| Fall time (tf) | s | 0.07 (IC=50A, VCE=600V, Tvj=25C) / 0.09 (Tvj=125C) | |||
| Turn-on energy loss per pulse (Eon) | mJ | 5.00 (IC=50A, VCE=600V, Tvj=25C) / 5.00 (Tvj=125C) | |||
| Turn-off energy loss per pulse (Eoff) | mJ | 5.50 (IC=50A, VCE=600V, Tvj=25C) / 5.50 (Tvj=125C) | |||
| Short circuit data (ISC) | A | 200 (Tvj=125C) | |||
| Thermal resistance, junction to case (RthJC) | K/W | 0.45 (per IGBT) | 0.75 (per diode) | ||
| Thermal resistance, case to heatsink (RthCH) | K/W | 0.19 (per IGBT) | 0.32 (per diode) | 0.02 (per module) | |
| Temperature under switching conditions (Tvj op) | C | -40 to 125 | -40 to 125 | -40 to 125 | |
| Repetitive peak reverse voltage (VRRM) | V | 1200 | |||
| Continuous DC forward current (IF) | A | 50 | |||
| Repetitive peak forward current (IFRM) | A | 100 (tP = 1 ms) | |||
| It - value | As | 700 (VR=0V, tP=10ms) | |||
| Forward voltage (VF) | V | 1.65 - 2.15 (IF=50A) | |||
| Peak reverse recovery current (IRM) | A | 67.0 - 70.0 (IF=50A) | |||
| Recovered charge (Qr) | C | 5.60 - 9.90 (IF=50A) | |||
| Reverse recovery energy (Erec) | mJ | 2.20 - 4.10 (IF=50A) | |||
| Isolation test voltage (VISOL) | kV | 2.5 (RMS, f=50Hz, t=1min) | |||
| Material of module baseplate | Cu | ||||
| Internal isolation | AI203 | ||||
| Creepage distance | mm | 10.0 (terminal to heatsink) | |||
| Clearance | mm | 7.5 (terminal to heatsink) | |||
| Comperative tracking index (CTI) | > 225 | ||||
| Stray inductance module (LsCE) | nH | 19 | |||
| Module lead resistance (RCC'+EE') | m | 2.50 (per switch) | |||
| Storage temperature (Tstg) | C | -40 to 125 | -40 to 125 | -40 to 125 | |
| Mounting torque for modul mounting (Screw M5) | Nm | 3.00 - 6.00 | |||
| Weight | g | 180 | |||
| Rated resistance (R25) | k | 5.00 (TC=25C) | |||
| Deviation of R100 | % | -5 to 5 (TC=100C) | |||
| Power dissipation (P25) | mW | 20.0 (TC=25C) | |||
| B-value (B25/50) | K | 3375 |
2410311239_Infineon-FS50R12KT3_C20190971.pdf
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