Industrial IGBT Infineon IKWH70N65WR6 with trenchstop 5 WR6 technology and enhanced creepage package
Key Attributes
Model Number:
IKWH70N65WR6
Product Custom Attributes
Pd - Power Dissipation:
290W
Td(off):
378ns
Td(on):
42ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
22pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.7mA
Gate Charge(Qg):
218nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.07mJ
Turn-On Energy (Eon):
2.2mJ
Input Capacitance(Cies):
5.32nF
Pulsed Current- Forward(Ifm):
70A
Output Capacitance(Coes):
52pF
Mfr. Part #:
IKWH70N65WR6
Package:
TO-247-3
Product Description
Product Overview
The TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This IGBT is optimized for PFC and welding applications, featuring stable temperature behavior, very low VCEsat, low Eoff, and easy parallel switching capability due to the positive temperature coefficient of VCEsat. It exhibits low temperature dependence of VCEsat and Esw.
Product Attributes
- Brand: TRENCHSTOP
- Technology: WR6
- Package Type: Enhanced creepage and clearance package
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
| Collector-emitter voltage | VCE | Tvj 25 C | 650 | V |
| DC collector current | IC | Tc = 25 C | 122 | A |
| Tc = 100 C | 77 | A | ||
| Pulsed collector current | ICpulse | tp limited by Tvjmax | 210 | A |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | Ptot | Tc = 25 C | 290 | W |
| Tc = 100 C | 145 | W | ||
| Collector-emitter saturation voltage | VCEsat | IC = 70 A, VGE = 15 V, Tvj = 25 C | 1.55 - 1.85 | V |
| IC = 70 A, VGE = 15 V, Tvj = 175 C | 1.8 | V | ||
| Gate-emitter threshold voltage | VGEth | IC = 0.7 mA, VCE = VGE | 3.2 - 4.8 | V |
| Input capacitance | Cies | VCE = 25 V, VGE=0 V, f = 100 kHz | 5320 | pF |
| Output capacitance | Coes | VCE = 25 V, VGE=0 V, f = 100 kHz | 52 | pF |
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE=0 V, f = 100 kHz | 22 | pF |
| Gate charge | QG | IC = 70 A, VGE = 15 V, VCC = 520 V | 218 | nC |
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 , RG(off) = 15 , L = 30 nH, C = 20 pF, IC = 70 A, Tvj = 25 C | 2.2 | mJ |
| VCC = 400 V, VGE = 0/15 V, RG(on) = 15 , RG(off) = 15 , L = 30 nH, C = 20 pF, IC = 70 A, Tvj = 175 C | 2.35 | mJ | ||
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 15 , RG(off) = 15 , L = 30 nH, C = 20 pF, IC = 70 A, Tvj = 25 C | 1.07 | mJ |
| VCC = 400 V, VGE = 0/15 V, RG(on) = 15 , RG(off) = 15 , L = 30 nH, C = 20 pF, IC = 70 A, Tvj = 175 C | 1.48 | mJ | ||
| Repetitive peak reverse voltage | VRRM | Tvj 25 C | 650 | V |
| Diode forward current | IF | Tc = 25 C | 37 | A |
| Tc = 100 C | 22 | A | ||
| Diode pulsed current | IFpulse | tp limited by Tvjmax | 70 | A |
| Diode forward voltage | VF | IF = 21.5 A, Tvj = 25 C | 1.3 - 1.6 | V |
| IF = 21.5 A, Tvj = 175 C | 1.35 | V | ||
| Diode reverse recovery time | trr | VR = 400 V, IF = 35 A, -diF/dt = 1870 A/s, Tvj = 25 C | 98 | ns |
| VR = 400 V, IF = 35 A, -diF/dt = 1800 A/s, Tvj = 175 C | 120 | ns | ||
| Diode reverse recovery charge | Qrr | VR = 400 V, IF = 35 A, -diF/dt = 1870 A/s, Tvj = 25 C | 2.8 | C |
| VR = 400 V, IF = 35 A, -diF/dt = 1800 A/s, Tvj = 175 C | 4.5 | C | ||
| Operating junction temperature | Tvj | -40 - 175 | C |
2410121609_Infineon-IKWH70N65WR6_C5359104.pdf
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