1200V 150A IGBT half bridge module JIAENSEMI GL150HF120T1SZ1 ideal for AC DC servo drive amplifiers
Key Attributes
Model Number:
GL150HF120T1SZ1
Product Custom Attributes
Pd - Power Dissipation:
658W
Td(off):
301ns
Td(on):
139ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.24nF
Input Capacitance(Cies):
29.8nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@5.7mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
0.78nF
Switching Energy(Eoff):
12.3mJ
Turn-On Energy (Eon):
4.4mJ
Mfr. Part #:
GL150HF120T1SZ1
Product Description
Product Overview
The JIAEN GL150HF120T1SZ1 is a 1200V, 150A Trench FS IGBT half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
- Material of module baseplate: Cu
- Internal isolation: Al2O3
- Comperative tracking index (CTI): >200
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| IGBT Maximum Rated Values | Collector-Emitter Voltage | 1200 | V | |||
| Gate-Emitter Voltage | ±20 | V | ||||
| Continuous Collector Current | IC (TC=70,Tvj max=150) | 150 | A | |||
| Repetitive Peak Collector Current | ICRM (tp= 1 ms) | 300 | A | |||
| Maximum Power Dissipation | PD (TC=25,Tvj max=150) | 658 | W | |||
| IGBT Characteristics | Collector-Emitter Saturation Voltage | VGE=15V, IC=150A, Tvj=25 | - | 1.6 | 1.9 | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=150A, Tvj=150 | - | 1.9 | - | V | |
| Gate Threshold Voltage | VGE=VCE, IC=5.7mA | 5.0 | 5.8 | 6.6 | V | |
| Total Gate Charge | VGE=-15V+15V | - | 1.05 | - | uC | |
| Capacitance | Input Capacitance | VCE=25V VGE=0V f=100KHz | - | 29.8 | - | nF |
| Output Capacitance | - | 0.78 | - | nF | ||
| Reverse Transfer Capacitance | - | 0.24 | - | nF | ||
| Leakage Current | Collector-Emitter Leakage Current | VCE=1200V, VGE=0V | - | - | 1.0 | mA |
| Gate Leakage Current, Forward | VGE=20V, VCE=0V | - | - | 200 | nA | |
| Diode Maximum Rated Values | Repetitive peak reverse voltage | VRRM | 1200 | V | ||
| Continuous DC Forward Current | IF | 150 | A | |||
| Diode Characteristics | Diode Forward Voltage | IF=150A, VGE=0V, Tvj=25 | - | 2.7 | 3.2 | V |
| Diode Forward Voltage | IF=150A, VGE=0V, Tvj=150 | - | 1.9 | - | V | |
| Thermal Resistance | Thermal resistance, junction to case (IGBT) | Rth j-c | - | - | 0.19 | K/W |
| Thermal Resistance | Thermal resistance, junction to case (Diode) | Rth j-c | - | - | 0.31 | K/W |
| Temperature | Temperature under switching condition | Tvj op | -40 | - | 150 | |
| Isolation | Module Isolation test voltage RMS, f=50 Hz, t=1 min | VISOL | 4.0 | kV |
2509021810_JIAENSEMI-GL150HF120T1SZ1_C51484290.pdf
Related Products
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
