PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode
Key Attributes
Model Number:
FF900R12IP4
Product Custom Attributes
Td(off):
700ns
Pd - Power Dissipation:
5.1kW
Td(on):
200ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
2.8nF
Input Capacitance(Cies):
54nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@33mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
1800A
Switching Energy(Eoff):
125mJ
Turn-On Energy (Eon):
71mJ
Mfr. Part #:
FF900R12IP4
Product Description
Product Overview
The FF900R12IP4 is a PrimePACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with NTC. It offers extended operation temperature, high DC stability, and excellent short circuit capability. Ideal for high power applications such as auxiliary inverters, motor drives, traction drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Infineon (implied by datasheet format)
- Package Type: PrimePACK2
- Certifications: CTI > 400
Technical Specifications
| Parameter | Value | Unit | Notes |
| Product Name | FF900R12IP4 | IGBT Module | |
| VCES | 1200 | V | Collector-emitter voltage |
| IC nom | 900 | A | Continuous DC collector current at TC = 100C |
| ICRM | 1800 | A | Repetitive peak collector current (tP = 1 ms) |
| Ptot | 5.10 | kW | Total power dissipation at TC = 25C |
| VGES | +/-20 | V | Gate-emitter peak voltage |
| VCEsat (typ.) | 1.70 | V | Collector-emitter saturation voltage at IC = 900 A, VGE = 15 V, Tvj = 25C |
| VGEth (typ.) | 5.8 | V | Gate threshold voltage at IC = 33.0 mA, VCE = VGE, Tvj = 25C |
| QG (typ.) | 6.40 | C | Gate charge at VGE = -15 V ... +15 V |
| RGint (typ.) | 1.2 | Internal gate resistor at Tvj = 25C | |
| Cies (typ.) | 54.0 | nF | Input capacitance at f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Cres (typ.) | 2.80 | nF | Reverse transfer capacitance at f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| ICES (max.) | 5.0 | mA | Collector-emitter cut-off current at VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| IGES (max.) | 400 | nA | Gate-emitter leakage current at VCE = 0 V, VGE = 20 V, Tvj = 25C |
| td on (typ.) | 0.20 | s | Turn-on delay time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C |
| tr (typ.) | 0.14 | s | Rise time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C |
| td off (typ.) | 0.70 | s | Turn-off delay time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C |
| tf (typ.) | 0.20 | s | Fall time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C |
| Eon (typ.) | 71.0 | mJ | Turn-on energy loss per pulse at IC = 900 A, VCE = 600 V, LS = 45 nH, VGE = 15 V, di/dt = 4800 A/s, RGon = 1.6 , Tvj = 25C |
| Eoff (typ.) | 125 | mJ | Turn-off energy loss per pulse at IC = 900 A, VCE = 600 V, LS = 45 nH, VGE = 15 V, du/dt = 2800 V/s, RGoff = 1.6 , Tvj = 25C |
| ISC (typ.) | 3600 | A | Short circuit current at VGE 15 V, VCC = 800 V, VCEmax = VCES - LsCE di/dt, Tvj = 150C, tP 10 s |
| RthJC (IGBT) | 29.5 | K/kW | Thermal resistance, junction to case per IGBT |
| RthCH (IGBT) | 14.0 | K/kW | Thermal resistance, case to heatsink per IGBT |
| Tvj op | -40 to 150 | C | Temperature under switching conditions |
| VRRM | 1200 | V | Repetitive peak reverse voltage |
| IF | 900 | A | Continuous DC forward current |
| IFRM | 1800 | A | Repetitive peak forward current (tP = 1 ms) |
| It (typ.) | 91.0 | kAs | Grenzlastintegral at VR = 0 V, tP = 10 ms, Tvj = 125C |
| VF (typ.) | 1.90 | V | Forward voltage at IF = 900 A, VGE = 0 V, Tvj = 25C |
| IRM (typ.) | 500 | A | Peak reverse recovery current at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C |
| Qr (typ.) | 90.0 | C | Recovered charge at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C |
| Erec (typ.) | 38.0 | mJ | Reverse recovery energy at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C |
| RthJC (Diode) | 53.5 | K/kW | Thermal resistance, junction to case per diode |
| RthCH (Diode) | 25.5 | K/kW | Thermal resistance, case to heatsink per diode |
| R25 (NTC) | 5.00 | k | NTC rated resistance at TC = 25C |
| R/R (NTC) | -5 to 5 | % | Deviation of R100 at TC = 100C |
| P25 (NTC) | 20.0 | mW | NTC power dissipation at TC = 25C |
| B25/50 (NTC) | 3375 | K | NTC B-value |
| B25/80 (NTC) | 3411 | K | NTC B-value |
| B25/100 (NTC) | 3433 | K | NTC B-value |
| VISOL | 4.0 | kV | Isolation test voltage RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 33.0 | mm | |
| Creepage distance (terminal to terminal) | 33.0 | mm | |
| Clearance (terminal to heatsink) | 19.0 | mm | |
| Clearance (terminal to terminal) | 19.0 | mm | |
| CTI | > 400 | Comperative tracking index | |
| RthCH (Module) | 4.50 | K/kW | Thermal resistance, case to heatsink per module |
| LsCE | 18 | nH | Module stray inductance |
| RCC'+EE' | 0.30 | m | Module lead resistance, terminals - chip per switch at TC = 25C |
| Tstg | -40 to 150 | C | Storage temperature |
| Mounting torque (Screw M5) | 3.00 - 6.00 | Nm | For module mounting |
| Mounting torque (Screw M4) | 1.8 | Nm | For terminal connection |
| Mounting torque (Screw M8) | 8.0 - 10 | Nm | For terminal connection |
| Weight | 825 | g |
2007152220_Infineon-FF900R12IP4_C541143.pdf
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