12A 600V Infineon IRAMS12UP60A integrated power hybrid IC with high speed driver and temperature monitor
Key Attributes
Model Number:
IRAMS12UP60A
Product Custom Attributes
Mfr. Part #:
IRAMS12UP60A
Product Description
Product Description
The International Rectifier IRAMS12UP60A is a 12A, 600V Integrated Power Hybrid IC designed for advanced Appliance Motor Drive applications. It features open emitter pins and offers an extremely compact, high-performance AC motor-driver solution in a single isolated package. This HIC integrates IR's low VCE(on) Trench IGBT technology with a 3-phase high voltage, high-speed driver. Key features include a built-in high-precision temperature monitor, over-current protection, short-circuit rated IGBTs, and an integrated under-voltage lockout function, ensuring high levels of protection and fail-safe operation. Its single in-line package with full transfer mold structure and CTI>600 minimizes PCB space and simplifies heatsinking.
Key Features
- Integrated gate drivers and bootstrap diodes
- Temperature monitor
- Protection shutdown pin
- Low VCE(on) Trench IGBT technology
- Undervoltage lockout for all channels
- Matched propagation delay for all channels
- Schmitt-triggered input logic
- Cross-conduction prevention logic
- Lower di/dt gate driver for better noise immunity
- Motor Power range: 0.3~0.9kW / 85~253 Vac
- Isolation: 2000VRMS min and CTI> 600
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| IGBT/FW Diode Blocking Voltage | VCES / VRRM | 600 | V | |||
| Positive Bus Input Voltage | V+ | 450 | V | |||
| RMS Phase Current at FPWM=16kHz | Io @ TC=25C | 12 | A | Note 1 | ||
| RMS Phase Current at FPWM=16kHz | Io @ TC=100C | 6 | A | Note 1 | ||
| Maximum Peak Phase Current | Ipk | 18 | A | Note 2 | ||
| Maximum PWM Carrier Frequency | Fp | 20 | kHz | |||
| Maximum Power dissipation per IGBT @ TC =25C | Pd | 26 | W | |||
| Isolation Voltage (1min) | VISO | 2000 | VRMS | |||
| Maximum Operating Junction Temperature | TJ (IGBT & Diode & IC) | +150 | C | |||
| Operating Case Temperature Range | TC | -20 | +100 | C | ||
| Storage Temperature Range | TSTG | -40 | +125 | C | ||
| Mounting torque Range (M3 screw) | 0.8 | 1.0 | Nm | |||
| Bootstrap Diode Peak Forward Current | IBDF | 1.0 | A | tP=10ms, TJ=150C, TC=100C | ||
| Peak Bootstrap Resistor Peak Power (Single Pulse) | PBR | 15.0 | W | tP=100s, TC=100C | ||
| High side floating supply offset voltage | VS1,2,3 | -20 | V | VB1,2,3 | ||
| High side floating supply voltage | VB1,2,3 | -0.3 | 600 | V | ||
| Low Side and logic fixed supply voltage | VCC | -0.3 | 20 | V | ||
| Input voltage | VIN | -0.3 | Lower of (VSS+15V) or VCC+0.3V | V | LIN, HIN, T/Itrip | |
| Inverter Section Electrical Characteristics | ||||||
| Collector-to-Emitter Breakdown Voltage | V(BR)CES | 600 | V | VIN=5V, IC=250A | ||
| Temperature Coeff. Of Breakdown Voltage | V(BR)CES / T | 0.47 | V/C | VIN=5V, IC=500A (25C - 150C) | ||
| Collector-to-Emitter Saturation Voltage | VCE(ON) | 1.5 | 1.8 | V | IC=6A, TJ=25C | |
| Collector-to-Emitter Saturation Voltage | VCE(ON) | 1.7 | V | IC=6A, TJ=150C | ||
| Diode Forward Voltage Drop | VFM | 6 | 80 | V | IF=6A | |
| Diode Forward Voltage Drop | VFM | 1.85 | 2.45 | V | IF=6A, TJ=150C | |
| Diode Forward Voltage Drop | VFM | 1.5 | V | IF=6A | ||
| Diode Forward Voltage Drop | VFM | 1.25 | V | IF=1A | ||
| Diode Forward Voltage Drop | VFM | 1.10 | V | IF=1A, TJ=125C | ||
| Bootstrap Resistor Value | RBR | 2 | TJ=25C | |||
| Bootstrap Resistor Tolerance | RBR/RBR | 5 | % | TJ=25C | ||
| Bootstrap Diode Forward Voltage Drop | VBDFM | 1.25 | V | VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. | ||
| Inverter Section Switching Characteristics | ||||||
| Turn-On Switching Loss | EON | 270 | 400 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 | |
| Turn-Off Switching Loss | EOFF | 55 | 85 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 | |
| Total Switching Loss | ETOT | 325 | 485 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 | |
| Diode Reverse Recovery energy | EREC | 10 | 20 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 | |
| Diode Reverse Recovery time | tRR | 100 | ns | IC=6A, V+=400V, VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Turn-On Switching Loss | EON | 390 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Turn-off Switching Loss | EOFF | 110 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Total Switching Loss | ETOT | 500 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Diode Reverse Recovery energy | EREC | 35 | J | IC=6A, V+=400V, VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Diode Reverse Recovery time | tRR | 140 | ns | IC=6A, V+=400V, VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 | ||
| Turn-On IGBT Gate Charge | QG | 19 | 29 | nC | IC=8A, V+=400V, VGE=15V | |
| Reverse Bias Safe Operating Area | RBSOA | TJ=150C, IC=6A, VP=600V | ||||
| Short Circuit Safe Operating Area | SCSOA | 5 | s | TJ=25C, V+= 400V, VGE=+15V to 0V | ||
| Recommended Operating Conditions | ||||||
| High side floating supply voltage | VB1,2,3 | VS+12.5 | VS+15 | VS+17.5 | V | |
| High side floating supply offset voltage | VS1,2,3 | 450 | V | Note 4 | ||
| Low side and logic fixed supply voltage | VCC | 13.5 | 15 | 16.5 | V | |
| T/ITRIP input voltage | VT/ITRIP | VSS | VSS+5 | V | ||
| Logic input voltage | VIN | VSS | VSS+5 | V | LIN, HIN | |
| High side PWM pulse width | HIN | 1 | s | |||
| Deadtime External dead time between HIN and LIN | 1 | s | ||||
| Driver Function Static Electrical Characteristics | ||||||
| Positive going input threshold for LIN, HIN | VIN,th+ | 3.0 | V | |||
| Negative going input threshold for LIN, HIN | VIN,th- | 0.8 | V | |||
| VCC/VBS supply undervoltage, Positive going threshold | VCCUV+, VBSUV+ | 10.6 | 11.1 | 11.6 | V | |
| VCC/VBS supply undervoltage, Negative going threshold | VCCUV-, VBSUV- | 10.4 | 10.9 | 11.4 | V | |
| VCC and VBS supply undervoltage lock-out hysteresis | VCCUVH, VBSUVH | 0.2 | V | |||
| Quiescent VBS supply current | IQBS | 120 | A | VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. | ||
| Quiescent VCC supply current | IQCC | 2.3 | mA | VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. | ||
| Offset Supply Leakage Current | ILK | 50 | A | |||
| Input bias current (OUT=LO) | IIN+ | 100 | 220 | A | The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) | |
| Input bias current (OUT=HI) | IIN- | -1 | 200 | 300 | A | The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) |
| ITRIP threshold Voltage | V(T/ITRIP) | 3.85 | 4.3 | 4.75 | V | VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. |
| ITRIP Input Hysteresis | V(T/ITrip, HYS) | 0.15 | V | VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. | ||
| Driver Function Dynamic Electrical Characteristics | ||||||
| Input to Output propagation turn- on delay time | TON | 600 | ns | see fig.11 | ||
| Input to Output propagation turn- off delay time | TOFF | 600 | ns | see fig. 11 | ||
| Input filter time (HIN,LIN) | TFILIN | 200 | s | VIN=0 or VIN=5V | ||
| ITRIP Blanking Time | TBLT-ITRIP | 150 | ns | VIN=0 or VIN=5V, VITRIP=5V | ||
| ITRIP to six switch turn-off propagation delay | TITRIP | 1.75 | s | see fig. 2 | ||
| Internal Dead Time injected by driver | DT | 220 | 290 | 360 | ns | VIN=0 or VIN=5V |
| Matching Propagation Delay Time (On & Off) all channels | MT | 40 | 75 | ns | External dead time> 400ns | |
| Matching Propagation Delay Time (On & Off) all channels | MT | 7.7 | TC = 25C | |||
| Matching Propagation Delay Time (On & Off) all channels | MT | 6.7 | TC = 100C | |||
| Post ITRIP to six switch turn-off clear time | TFLT-CLR | 7.7 | ms | IC=6A, V+=300V VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Driver only timing unless otherwise specified. | ||
| Thermal and Mechanical Characteristics | ||||||
| Thermal resistance, per IGBT | Rth(J-C) | 4.7 | 5.2 | C/W | ||
| Thermal resistance, per Diode | Rth(J-C) | 5.8 | 6.9 | C/W | ||
| Thermal resistance, C-S | Rth(C-S) | 0.1 | C/W | Flat, greased surface. Heatsink compound thermal conductivity 1W/mK | ||
| Comparative Tracking Index | CTI | 600 | V | |||
| Curvature of module backside | BKCurve | 0 | m | Convex only | ||
| Internal NTC - Thermistor Characteristics | ||||||
| Resistance | R25 | 97 | 100 | 103 | k | TC = 25C |
| Resistance | R125 | 2.25 | 2.52 | 2.80 | k | TC = 125C |
| B-constant (25-50C) | B | 4165 | 4250 | 4335 | k | R2 = R1e [B(1/T2 - 1/T1)] |
| Temperature Range | -40 | 125 | C | |||
| Typ. Dissipation constant | 1 | mW/C | TC = 25C | |||
| Resistance | RT | 12 | k | TC=25C | ||
| Resistor Tolerance | RT/RT | 1 | % | TC=25C | ||
2411272327_Infineon-IRAMS12UP60A_C19287707.pdf
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