Low gate charge N Channel MOSFET IPS FTP03N06NA suitable for high power switching and RoHS compliant
Key Attributes
Model Number:
FTP03N06NA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V,95A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
371.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
5.681nF@25V
Pd - Power Dissipation:
284W
Gate Charge(Qg):
98.4nC@10V
Mfr. Part #:
FTP03N06NA
Package:
TO-220
Product Description
Product Overview
The FTP03N06NA is an N-Channel MOSFET from InPower Semiconductor Co., Ltd. (IPS) designed for applications such as adaptors, chargers, and SMPS. It features low ON resistance, low gate charge, and is RoHS compliant. This MOSFET offers a continuous drain current of 230A at 25 and 60V Drain-to-Source Voltage, making it suitable for high-power switching applications.
Product Attributes
- Brand: IPS (InPower Semiconductor Co., Ltd.)
- Product Line: FTP
- Model: FTP03N06NA
- Package: TO-220
- Certifications: RoHS Compliant
- Origin: 2017 InPower Semiconductor Co., Ltd.
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | -- | -- | 60 | V | -- |
| ID | Continuous Drain Current | -- | -- | 230 | A | TC =25 |
| ID | Continuous Drain Current | -- | -- | 145 | A | TC =100 |
| IDM | Pulsed Drain Current (NOTE *1) | -- | -- | 920 | A | -- |
| PD | Power Dissipation | -- | -- | 284 | W | -- |
| -- | Derating Factor above 25 | -- | -- | 2.272 | W/ | -- |
| VGS | Gate-to-Source Voltage | -- | -- | 20 | V | -- |
| EAS | Single Pulse Avalanche Energy(NOTE *2) | -- | -- | 1024 | mJ | -- |
| TL | Maximum Temperature for Soldering | -- | -- | 300 | -- | |
| TJ and TSTG | Operating Junction and Storage Temperature Range | -55 | -- | 150 | -- | |
| Thermal Resistance | ||||||
| RJC | Junction-to-Case | -- | -- | 0.44 | /W | Water cooled heatsink, PD adjusted for a peak junction temperature of +150. |
| RJA | Junction-to-Ambient | -- | -- | 62.5 | /W | 1 cubic foot chamber, free air. |
| OFF Characteristics (TC=25 unless otherwise specified) | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | 60 | -- | -- | V | VGS=0V, ID=250A |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 1 | A | VDS=60V, VGS=0V TJ=25 |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 100 | A | VDS=48V, VGS=0V TJ=125 |
| IGSS | Gate-to-Source Forward Leakage | -- | -- | +100 | nA | VGS=+20V |
| IGSS | Gate-to-Source Reverse Leakage | -- | -- | -100 | nA | VGS= -20V |
| ON Characteristics (TJ=25 unless otherwise specified) | ||||||
| RDS(ON) | Static Drain-to-Source On-Resistance | -- | 3.0 | 3.6 | m | VGS=10V, ID=95A |
| VGS(TH) | Gate Threshold Voltage | 2 | -- | 4 | V | VDS=VGS,ID=250A |
| Dynamic Characteristics (Essentially independent of operating temperature) | ||||||
| Rg | Gate resistance | -- | 1.3 | -- | VGS= 0V,VDS = 25V f =1.0MHz | |
| Ciss | Input Capacitance | -- | 5681 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Coss | Output Capacitance | -- | 734.8 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Crss | Reverse Transfer Capacitance | -- | 371.5 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Qg(10V) | Total Gate Charge | -- | 98.4 | -- | nC | ID=115A,VDD=48V VGS = 10V |
| Qgs | Gate-to-Source Charge | -- | 29 | -- | nC | ID=115A,VDD=48V VGS = 10V |
| Qgd | Gate-to-Drain (Miller) Charge | -- | 33.2 | -- | nC | ID=115A,VDD=48V VGS = 10V |
| Resistive Switching Characteristics (Essentially independent of operating temperature) | ||||||
| td(ON) | Turn-on Delay Time | -- | 41.9 | -- | ns | VDD=30V, ID=115A, VG=10V RG=6 |
| trise | Rise Time | -- | 47 | -- | ns | VDD=30V, ID=115A, VG=10V RG=6 |
| td(OFF) | Turn-Off Delay Time | -- | 70.9 | -- | ns | VDD=30V, ID=115A, VG=10V RG=6 |
| tfall | Fall Time | -- | 29.3 | -- | ns | VDD=30V, ID=115A, VG=10V RG=6 |
| Source-Drain Diode Characteristics (Tc=25 unless otherwise specified) | ||||||
| IS | Continuous Source Current (Body Diode) | -- | -- | 230 | A | TC=25 |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 920 | A | -- |
| VSD | Diode Forward Voltage | -- | -- | 1.5 | V | ISD=95A, VGS=0V |
| trr | Reverse Recovery Time | -- | 38.1 | -- | ns | IF= 115A di/dt=100A/us |
| Qrr | Reverse Recovery Charge | -- | 51.9 | -- | nC | IF= 115A di/dt=100A/us |
Notes:
- *1. Repetitive rating; pulse width limited by maximum junction temperature.
- *2. L=0.5mH, ID=64A, Start TJ=25
2411220158_IPS-FTP03N06NA_C527101.pdf
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