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quality high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts factory
quality high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts factory

high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts

Key Attributes
Model Number: 3DD4613H-92-FJ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
500V
Operating Temperature:
-
Mfr. Part #:
3DD4613H-92-FJ
Package:
TO-92-3
Product Description

Product Overview

The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Certifications: RoHS compliant

Technical Specifications

Order Code Marking Package IC (A) VCEO (V) VCES (V) PC (TO-92-FJ) (W) PC (IPAK/DPAK) (W)
3DD4613H-TJ-A 4613H TO-92-FJ 1.5 500 900 1 -
3DD4613H-TJ-AR 4613H TO-92-FJ 1.5 500 900 1 -
3DD4613H-TJ-C 4613H TO-92-FJ 1.5 500 900 1 -
3DD4613H-TJ-CR 4613H TO-92-FJ 1.5 500 900 1 -
3DD4613H-R-A 4613H DPAK 1.5 500 900 - 20
3DD4613H-R-AR 4613H DPAK 1.5 500 900 - 20
3DD4613H-R-C 4613H DPAK 1.5 500 900 - 20
3DD4613H-R-CR 4613H DPAK 1.5 500 900 - 20
3DD4613H-V-C 4613H IPAK 1.5 500 900 - 20
3DD4613H-V-CR 4613H IPAK 1.5 500 900 - 20
3DD4613H-V-B 4613H IPAK 1.5 500 900 - 20
3DD4613H-V-BR 4613H IPAK 1.5 500 900 - 20
Parameter Symbol Value (min) Value (typ) Value (max) Unit Tests conditions
Collector- Emitter VoltageVBE=0 VCES - - 900 V -
Collector- Emitter VoltageIB=0 VCEO - - 500 V -
Emitter-Base Voltage VEBO - - 9 V -
Collector CurrentDC IC - - 1.5 A -
Collector Currentpulse ICP - - 3.0 A -
Total Dissipation (TO-92-FJ) PC - - 1 W -
Total Dissipation (IPAK/DPAK) PC - - 20 W -
Junction Temperature Tj - - 150 -
Storage Temperature Tstg -55 - 150 -
Collector-Emitter Breakdown Voltage V(BR)CEO 500 560 - V IC=10mA,IB=0
Collector-Base Breakdown Voltage V(BR)CBO 900 1000 - V IC=1mA,IE=0
Emitter-Base Breakdown Voltage V(BR)EBO 9 14 - V IE=1mA,IC=0
Collector Cutoff Current ICBO - - 1 A VCB=900V, IE=0
Collector Cutoff Current ICEO - - 10 A VCE=500V,IB=0
Emitter Cutoff Current IEBO - - 0.5 A VEB=7V, IC=0
DC Current Gain Hfe 20 26 - - VCE=5V, IC=10Ma
DC Current Gain Hfe 20 30 40 - VCE=5V, IC=0.2A
DC Current Gain Hfe 5 8 20 - VCE=5V, IC=1.0A
Collector-Emitter Saturation Voltage VCE(sat) 0.7 - 1.5 V IC=1.0A, IB=0.25A
Collector-Emitter Saturation Voltage VCE(sat) - 0.3 0.8 V IC=0.5A, IB=0.1A
Base-Emitter Saturation Voltage VBE(sat) - 1.0 1.5 V IC=1.0A, IB=250Ma
Fall Time tf - - 1.0 s VCC=125V IC=0.1A, IB1=-IB2=0.02A
Storage Time ts - - 10 s -
Transition Frequency Ft 4 - - MHz VCE=10V, IC=0.1A
Thermal Resistance Junction Ambient (TO-92-FJ) Rth(j-a) - - 125 /W -
Thermal Resistance Junction Case (IPAK) Rth(j-c) - - 12.5 /W -
Thermal Resistance Junction Case (DPAK) Rth(j-c) - - 6.25 /W -

2410121217_Jilin-Sino-Microelectronics-3DD4613H-92-FJ_C272497.pdf

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