High Voltage Silicon NPN Darlington Power Transistor ISC 2SD798 with 2 Volt Maximum Saturation Voltage
Key Attributes
Model Number:
2SD798
Product Custom Attributes
Mfr. Part #:
2SD798
Package:
TO-220C
Product Description
Product Overview
The ISC 2SD798 is a Silicon NPN Darlington Power Transistor designed for high-voltage switching igniter applications. It features a high Collector-Emitter Sustaining Voltage of 300V(Min), a low Collector-Emitter Saturation Voltage of 2.0V(Max) @ IC=4A, and a high DC Current Gain of 1500(Min) @ IC=2A, VCE=2V. This transistor offers minimum lot-to-lot variations for robust device performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Silicon
- Material: NPN Darlington Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| VCBO | Collector-Base Voltage | 600 | V | |||
| VCEO | Collector-Emitter Voltage | 300 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current-Continuous | 6 | A | |||
| IB | Base Current-Continuous | 1.0 | A | |||
| PC | Collector Power Dissipation | @ TC=25 | 30 | W | ||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 | |||
| THERMAL CHARACTERISTICS | ||||||
| Rth j-c | Thermal Resistance,Junction to Case | 4.16 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 30mA ; L= 40mH | 300 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 40mA | 2.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A; IB= 40mA | 2.5 | V | ||
| ICBO | Collector Cutoff Current | VCB= 600V; IE= 0 | 500 | A | ||
| IEBO | Emitter Cutoff Current | VEB= 5V; IC=0 | 2 | mA | ||
| hFE -1 | DC Current Gain | IC= 2A ; VCE= 2V | 1500 | |||
| hFE -2 | DC Current Gain | IC= 4A ; VCE= 2V | 20 | |||
| COB | Output Capacitance | IE= 0 ; VCB= 50V;ftest= 1.0MHz | 35 | pF | ||
| Switching times | ||||||
| ton | Turn-on Time | IC= 4A , IB1= IB2= 40mA RL= 25; VCC100V | 1.0 | s | ||
| tstg | Storage Time | 8.0 | s | |||
| tf | Fall Time | 5.0 | s | |||
2412090935_ISC-2SD798_C5128647.pdf
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