High Collector Current Silicon NPN Power Transistor ISC 2SC2233 with 60V Collector Emitter Breakdown Voltage

Key Attributes
Model Number: 2SC2233
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
40W
Transition Frequency(fT):
8MHz
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
2SC2233
Package:
TO-220
Product Description

Product Overview

The INCHANGE Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=5V, IC=1A. This transistor offers high collector current capability and high collector power dissipation, making it suitable for demanding applications such as TV horizontal deflection output.

Product Attributes

  • Brand: INCHANGE Semiconductor
  • Material: Silicon
  • Type: NPN Power Transistor

Technical Specifications

ParameterSymbolConditionsMinTyp.MaxUnit
Collector-Emitter Breakdown VoltageVCEO60V
DC Current GainhFEIC= 1A ; VCE= 5V30150
Collector Current-ContinuousIC4A
Collector Current-PeakICM10A
Base Current-ContinuousIB1A
Collector Power Dissipation @ Ta=25PC@ Ta=251.5W
Collector Power Dissipation @ TC=25PC@ TC=2540W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55150
Collector-Base VoltageVCBO200V
Emitter-Base VoltageVEBO5V
Collector-Emitter Saturation VoltageVCE(sat)IC= 4A; IB=0.4A1.0V
Base-Emitter Saturation VoltageVBE(sat)IC= 4A; IB=0.4A1.5V
Collector Cutoff CurrentICBOVCB= 170V ; IE= 010A
Emitter Cutoff CurrentIEBOVEB= 5V; IC= 010A
DC Current GainhFEIC= 4A ; VCE= 5V20
Current-GainBandwidth ProductfTIC= 500mA; VCE= 5V8MHz

2411220151_ISC-2SC2233_C2976467.pdf

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