High Collector Current Silicon NPN Power Transistor ISC 2SC2233 with 60V Collector Emitter Breakdown Voltage
Product Overview
The INCHANGE Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=5V, IC=1A. This transistor offers high collector current capability and high collector power dissipation, making it suitable for demanding applications such as TV horizontal deflection output.
Product Attributes
- Brand: INCHANGE Semiconductor
- Material: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
| Collector-Emitter Breakdown Voltage | VCEO | 60 | V | |||
| DC Current Gain | hFE | IC= 1A ; VCE= 5V | 30 | 150 | ||
| Collector Current-Continuous | IC | 4 | A | |||
| Collector Current-Peak | ICM | 10 | A | |||
| Base Current-Continuous | IB | 1 | A | |||
| Collector Power Dissipation @ Ta=25 | PC | @ Ta=25 | 1.5 | W | ||
| Collector Power Dissipation @ TC=25 | PC | @ TC=25 | 40 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Collector-Base Voltage | VCBO | 200 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= 4A; IB=0.4A | 1.0 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC= 4A; IB=0.4A | 1.5 | V | ||
| Collector Cutoff Current | ICBO | VCB= 170V ; IE= 0 | 10 | A | ||
| Emitter Cutoff Current | IEBO | VEB= 5V; IC= 0 | 10 | A | ||
| DC Current Gain | hFE | IC= 4A ; VCE= 5V | 20 | |||
| Current-GainBandwidth Product | fT | IC= 500mA; VCE= 5V | 8 | MHz |
2411220151_ISC-2SC2233_C2976467.pdf
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