Silicon NPN Power Transistor ISC 2SD1047 Designed for High Current and Audio Frequency Amplifier Output Stages

Key Attributes
Model Number: 2SD1047
Product Custom Attributes
Mfr. Part #:
2SD1047
Package:
TO-3PN
Product Description

Product Overview

The ISC 2SD1047 is a Silicon NPN Power Transistor designed for high-current applications. It features a high collector-emitter breakdown voltage of 140V, good linearity of hFE, and a wide area of safe operation. This transistor is recommended for 60W audio frequency amplifier output stages and is the complement to the 2SB817 type. It offers minimum lot-to-lot variations for robust performance and reliable operation.

Product Attributes

  • Brand: ISC
  • Trademark: ISC & ISCsemi
  • Origin: Silicon
  • Type: NPN Power Transistor

Technical Specifications

ParameterSymbolConditionsMinTyp.MaxUnit
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 30mA ; RBE= 140V
Collector-Base Breakdown VoltageV(BR)CBOIC=1mA; IE= 0160V
Emitter-Base Breakdown VoltageV(BR)EBOIE= 5mA; IC= 06V
Collector-Emitter Saturation VoltageVCE(sat)IC= 5.0A; IB= 0.5A0.62.5V
Base -Emitter On VoltageVBE(on)IC= 1A ; VCE= 5V1.5V
Collector Cutoff CurrentICBOVCB= 80V ; IE= 0100A
Emitter Cutoff CurrentIEBOVEB= 4V; IC= 0100A
DC Current Gain (hFE-1)hFE-1IC= 1A ; VCE= 5V60200
DC Current Gain (hFE-2)hFE-2IC= 6A ; VCE= 5V20
Output CapacitanceCOBIE= 0;VCB= 10V;ftest= 1.0MHz210pF
Current-GainBandwidth ProductfTIC= 1A ; VCE= 5V15MHz
Turn-on TimetonIC= 1A ,RL= 20, IB1= IB2= 0.1A,VCC= 20V0.26s
Storage Timetstg6.88s
Fall Timetf0.68s
Collector Current-ContinuousIC12A
Collector Current-PulseICP15A
Collector Power DissipationPC@ TC=25100W
Junction TemperatureTJ150
Storage Temperature RangeTstg-40~150

2410122028_ISC-2SD1047_C491425.pdf

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