Low On Resistance N Channel MOSFET IPS FTP02N04NA Suitable for Power Switching and Thermal Management
Key Attributes
Model Number:
FTP02N04NA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
300A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
950pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
14.36nF@25V
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
250nC@10V
Mfr. Part #:
FTP02N04NA
Package:
TO-220
Product Description
InPower Semiconductor FTP02N04NA N-Channel MOSFET
Product Overview
The FTP02N04NA is a high-performance N-Channel MOSFET designed for power switching applications. It features low ON resistance, low gate charge, and a robust design suitable for adaptors, chargers, and Switched-Mode Power Supplies (SMPS). This RoHS compliant component offers reliable performance with excellent thermal management capabilities.
Product Attributes
- Brand: IPS (InPower Semiconductor)
- Package: TO-220
- Certifications: RoHS Compliant
- Material/Finish: Lead Free Package and Finish
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | 40 | V | TC=25 unless otherwise specified | ||
| ID | Continuous Drain Current | 300 | A | TC=25 unless otherwise specified | ||
| ID | Continuous Drain Current | 197 | A | TC = 100 C | ||
| IDM | Pulsed Drain Current (NOTE *1) | 1200 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| EAS | Single Pulse Avalanche Energy(NOTE *2) | 800 | mJ | |||
| PD | Power Dissipation | 312.5 | W | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| TJ and TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | |||
| Thermal Resistance | ||||||
| RJC | Junction-to-Case | 0.4 | W | Water cooled heatsink, PD adjusted for a peak junction temperature of +150. | ||
| RJA | Junction-to-Ambient | 62.5 | W | 1 cubic foot chamber, free air. | ||
| OFF Characteristics | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | 40 | -- | -- | V | VGS=0V, ID=250A |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 1 | A | VDS=40V, VGS=0V TC=25 |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 100 | A | VDS=32V, VGS=0V TC=125 |
| IGSS | Gate-to-Source Forward Leakage | -- | -- | +100 | nA | VGS=+20V |
| IGSS | Gate-to-Source Reverse Leakage | -- | -- | -100 | nA | VGS= -20V |
| ON Characteristics | ||||||
| RDS(ON) | StaticDrain-to-Source On-Resistance | -- | 1.8 | 2.3 | m | VGS=10V, ID=100A |
| VGS(TH) | Gate Threshold Voltage | 1 | -- | 3 | V | VDS=VGS,ID=250A |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | -- | -- | 300 | A | Tc=25 unless otherwise specified |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 1200 | A | |
| VSD | Diode Forward Voltage | -- | -- | 1.5 | V | ISD=100A,VGS=0V |
| trr | Reverse Recovery Time | -- | 40 | -- | ns | IF= 50A di/dt=100A/us |
| Qrr | Reverse Recovery Charge | -- | 45 | -- | uC | Pulse width 300s; duty cycle 2% |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | -- | 1.7 | -- | VGS=0V, VDS=0V, f=1MHz | |
| Ciss | Input Capacitance | -- | 14360 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Coss | Output Capacitance | -- | 1177 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Crss | Reverse Transfer Capacitance | -- | 950 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Qg | Total Gate Charge | -- | 250 | -- | nC | ID=100A,VDD=20V VGS = 10V |
| Qgs | Gate-to-Source Charge | -- | 57 | -- | nC | ID=100A,VDD=20V VGS = 10V |
| Qgd | Gate-to-Drain (Miller) Charge | -- | 60 | -- | nC | ID=100A,VDD=20V VGS = 10V |
Applications
- Adaptor
- Charger
- SMPS
Features
- RoHS Compliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
2411220146_IPS-FTP02N04NA_C527103.pdf
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