High current ISC IRFB3207ZG MOSFET transistor with 0.5 thermal resistance channel to case specification
Key Attributes
Model Number:
IRFB3207ZG
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.1mΩ@10V,75A
Gate Threshold Voltage (Vgs(th)):
4V
Number:
1 N-channel
Pd - Power Dissipation:
300W
Mfr. Part #:
IRFB3207ZG
Package:
TO-220
Product Description
Product Overview
The IRFB3207ZG is an N-Channel MOSFET transistor designed for a wide variety of applications. It offers reliable performance with features like 100% avalanche testing and minimum lot-to-lot variations.
Product Attributes
- Brand: ISC
- Registered Trademark: ISC & ISCsemi
- Origin: China (implied by website)
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
|---|---|---|---|---|
| VDSS | Drain-Source Voltage | 75 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current-Continuous | @ TC=25 | 120 | A |
| IDM | Drain Current-Single Pulsed | 670 | A | |
| PD | Total Dissipation | @TC=25 | 300 | W |
| Tj Max. | Operating Junction Temperature | 175 | ||
| Tstg | Storage Temperature | -55~175 | ||
| Rth(ch-c) | Channel-to-case thermal resistance | 0.5 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V; ID =250µA | 75 | V |
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID =150µA | 2-4 | V |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=75A | 4.1 | mΩ |
| IGSS | Gate-Source Leakage Current | VGS=±20V | ±0.1 | µA |
| IDSS | Drain-Source Leakage Current | VDS=75V; VGS= 0V | 20 | µA |
| VSD | Diode forward voltage | IS=75A, VGS = 0V | 1.3 | V |
2411220722_ISC-IRFB3207ZG_C5128645.pdf
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