7A Collector Current Silicon NPN Power Transistor ISC 2SD1163 with 120V Collector Emitter Breakdown Voltage
Key Attributes
Model Number:
2SD1163
Product Custom Attributes
Mfr. Part #:
2SD1163
Package:
TO-220C
Product Description
Product Overview
The ISC 2SD1163 is a Silicon NPN Power Transistor designed for TV horizontal deflection applications. It offers a high Collector Current of 7A and a Collector-Emitter Breakdown Voltage of 120V (Min.), ensuring robust device performance and reliable operation with minimum lot-to-lot variations.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA ; RBE= | 120 | V | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1mA ; IC= 0 | 6 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A | 2.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 0.5A | 1.2 | V | ||
| ICBO | Collector Cutoff Current | VCB= 300V ; IE= 0 | 5 | mA | ||
| hFE | DC Current Gain | IC= 5A ; VCE= 5V | 25 | |||
| tf | Fall Time | ICP= 3.5A; IB1= 0.45A | 0.5 | s | ||
| VCBO | Collector-Base Voltage | 300 | V | |||
| VCEO | Collector-Emitter Voltage | 120 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current-Continuous | 7 | A | |||
| ICM | Collector Current-Peak | 10 | A | |||
| IC(surge) | Collector Current-Surge | 20 | A | |||
| PC | Total Power Dissipation @ TC=25 | 40 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 |
2411220136_ISC-2SD1163_C5128632.pdf
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