1200V 200A Trench FS IGBT Half Bridge Module JIAENSEMI GN200HF120T3SS1 for Inverter and Servo Drives
Key Attributes
Model Number:
GN200HF120T3SS1
Product Custom Attributes
Pd - Power Dissipation:
1.071kW
Td(off):
527ns
Td(on):
126ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.74nF
Input Capacitance(Cies):
14.7nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@12.5mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
400A
Output Capacitance(Coes):
1.33nF
Switching Energy(Eoff):
21.6mJ
Turn-On Energy (Eon):
5.6mJ
Mfr. Part #:
GN200HF120T3SS1
Product Description
Product Overview
The JIAEN GN200HF120T3SS1 is a 1200V, 200A Trench FS IGBT Half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.
Product Attributes
- Brand: JIAEN
- Model: GN200HF120T3SS1
- Module Baseplate Material: Cu
- Internal Isolation Material: Al2O3
- Storage Temperature: -40~150
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| IGBT Maximum Rated Values | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current | IC | TC=70,Tvj max=175 | 200 | A | ||
| Repetitive Peak Collector Current | ICRM | tp= 1 ms | 400 | A | ||
| Maximum Power Dissipation | PD | TC=25,Tvj max=175 | 1071 | W | ||
| IGBT Characteristics | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=200A, Tvj=25 | 1.6 | 1.9 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=200A, Tvj=175 | 2.0 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=12.5mA | 5.0 | 6.2 | 7.5 | V |
| Total Gate Charge | Qg | VGE=-15V+15V | 1.13 | uC | ||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=100KHz | 14.7 | nF | ||
| Output Capacitance | Coes | 1.33 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.74 | nF | |||
| Collector-Emitter Leakage Current | ICES | VCE=1200V, VGE=0V | 1.0 | mA | ||
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE=0V | 200 | nA | ||
| Gate Leakage Current, Reverse | IGES | VGE=-20V, VCE=0V | -200 | nA | ||
| Turn-on Delay Time | td(on) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 126 | ns | ||
| Turn-on Rise Time | tr | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 77 | ns | ||
| Turn-off Delay Time | td(off) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 527 | ns | ||
| Turn-off Fall Time | tf | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 185 | ns | ||
| Turn-on Switching Loss | Eon | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 5.6 | mJ | ||
| Turn-off Switching Loss | Eoff | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 21.6 | mJ | ||
| Total Switching Loss | Ets | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25 | 27.2 | mJ | ||
| Turn-on Delay Time | td(on) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 166 | ns | ||
| Turn-on Rise Time | tr | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 82 | ns | ||
| Turn-off Delay Time | td(off) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 660 | ns | ||
| Turn-off Fall Time | tf | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 247 | ns | ||
| Turn-on Switching Loss | Eon | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 8.6 | mJ | ||
| Turn-off Switching Loss | Eoff | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 29.3 | mJ | ||
| Total Switching Loss | Ets | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125 | 37.9 | mJ | ||
| Turn-on Delay Time | td(on) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 184 | ns | ||
| Turn-on Rise Time | tr | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 84 | ns | ||
| Turn-off Delay Time | td(off) | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 707 | ns | ||
| Turn-off Fall Time | tf | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 296 | ns | ||
| Turn-on Switching Loss | Eon | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 10.9 | mJ | ||
| Turn-off Switching Loss | Eoff | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 32.6 | mJ | ||
| Total Switching Loss | Ets | VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175 | 43.5 | mJ | ||
| Short circuit current | Isc | VGE=15V, Tp10us, Tvj=175, Vcc=600V, VCEM Chip1200V | 670 | A | ||
| Thermal resistance, junction to case | Rth j-c | 0.14 | K/W | |||
| Temperature under switching condition | Tvj op | -40 | 175 | |||
| Diode Maximum Rated Values | ||||||
| Repetitive peak reverse voltage | VRRM | 1200 | V | |||
| Continuous DC Forward Current | IF | 200 | A | |||
| Repetitive Peak Collector Current | IFRM | tp=1ms | 400 | A | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VF | IF=200A, VGE=0V, Tvj=25 | 1.8 | 2.4 | V | |
| Diode Forward Voltage | VF | IF=200A, VGE=0V, Tvj=175 | 1.9 | V | ||
| Peak reverse recovery current | IRM | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25 | 149 | A | ||
| Diode Reverse Recovery Charge | Qrr | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25 | 17.1 | uC | ||
| Reverse recovery energy | Erec | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25 | 12.6 | mJ | ||
| Peak reverse recovery current | IRM | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125 | 185 | A | ||
| Diode Reverse Recovery Charge | Qrr | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125 | 33.6 | uC | ||
| Reverse recovery energy | Erec | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125 | 17.8 | mJ | ||
| Peak reverse recovery current | IRM | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=175 | 206 | A | ||
| Diode Reverse Recovery Charge | Qrr | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=175 | 43.2 | uC | ||
| Reverse recovery energy | Erec | IC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=175 | 21.9 | mJ | ||
| Thermal resistance, junction to case | Rth j-c | 0.2 | K/W | |||
| Temperature under switching condition | Tvj op | -40 | 175 | |||
| Module Specifications | ||||||
| Isolation test voltage RMS, f=50 Hz, t=1 min | VISOL | 4.0 | kV | |||
| Clearance distance in air (Terminal to terminal) | 10 | mm | ||||
| Surface creepage distance (Terminal to terminal) | 13 | mm | ||||
| Comperative tracking index | CTI | >200 | ||||
| Mounting torque for module mounting (M6 screws) | 3 | ~ | 6 | Nm | ||
2509021810_JIAENSEMI-GN200HF120T3SS1_C51484291.pdf
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