Durable MOSFET Jilin Sino Microelectronics JCS7N65FB 220MF designed for power management and switching
Key Attributes
Model Number:
JCS7N65FB-220MF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
-
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
JCS7N65FB-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS7N65B is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss (typical 16pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS7N65BB-B-B | N/A | TO-262 | 7.0 | 650 | 1.3 | 25 |
| JCS7N65SB-S-B | JCS7N65SB | TO-263 | 7.0 | 650 | 1.3 | 25 |
| JCS7N65CB-C-B | JCS7N65CB | TO-220C | 7.0 | 650 | 1.3 | 25 |
| JCS7N65FB-F-B | JCS7N65FB | TO-220MF | 7.0 | 650 | 1.3 | 25 |
| Parameter | Symbol | Value | Units | Notes |
| Drain-Source Voltage | VDSS | 650 | V | |
| Drain Current -continuous (Tc=25) | ID | 7.0* | A | *Drain current limited by maximum junction temperature |
| Drain Current -continuous (Tc=100) | ID | 4.3* | A | *Drain current limited by maximum junction temperature |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 590 | mJ | L=19.5mH, IAS=7.0A, VDD=50V, RG=25 ,Starting TJ=25 |
| Avalanche Current | IAR | 7.0 | A | Pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD 7.0A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 |
| Power Dissipation (TC=25) | PD | 142 | W | |
| Operating and Storage Temperature Range | TJ,TSTG | -55+150 |
| Parameter | Symbol | Test Conditions | Typ | Max | Units |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | 1.1 | 1.3 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | 1120 | 1350 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | 115 | 150 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | 23 | 30 | pF |
| Total Gate Charge | Qg | VDS =520V , ID=7A, VGS =10V | 25 | 35 | nC |
| Package | Rth(j-c) (/W) | Rth(j-A) (/W) |
| JCS7N65 CB/SB/BB | 0.85 | 62.5 |
| JCS7N65FB (TO-220MF) | 2.5 | 38.4 |
2409280231_Jilin-Sino-Microelectronics-JCS7N65FB-220MF_C272547.pdf
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