High frequency switching MOSFET Jilin Sino Microelectronics JCS730C N channel enhancement mode device
Key Attributes
Model Number:
JCS730C
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
-
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
720pF
Pd - Power Dissipation:
5.5W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
JCS730C
Package:
TO-220
Product Description
Product Overview
The JCS730 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This RoHS-compliant product is available in various packages including IPAK, DPAK, TO-262, TO-263, TO-220C, and TO-220MF.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Main Characteristics (ID) | Main Characteristics (VDSS) | Main Characteristics (Rds(on)@Vgs=10V) | Main Characteristics (Qg) |
| JCS730V-V-B, JCS730V-V-BR | N/A | IPAK | 5.5 A | 400 V | 1.0 | 31 nC |
| JCS730R-R-B, JCS730R-R-BR, JCS730R-R-A, JCS730R-R-AR | JCS730R | DPAK | 5.5 A | 400 V | 1.0 | 31 nC |
| JCS730B-B-B, JCS730B-B-BR | JCS730B | TO-262 | 5.5 A | 400 V | 1.0 | 31 nC |
| JCS730S-S-B, JCS730S-S-BR, JCS730S-S-A, JCS730S-S-AR | JCS730S | TO-263 | 5.5 A | 400 V | 1.0 | 31 nC |
| JCS730C-C-B, JCS730C-C-BR | JCS730C | TO-220C | 5.5 A | 400 V | 1.0 | 31 nC |
| JCS730F-F-B, JCS730F-F-BR | JCS730F | TO-220MF | 5.5 A | 400 V | 1.0 | 31 nC |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | JCS730V/R | JCS730S/B/C | JCS730F |
| Drain-Source Voltage | VDSS | 400 | V | |||
| Drain Current -continuous (TC=25) | ID | 5.5* | A | |||
| Drain Current -continuous (TC=100) | ID | 3.5* | A | |||
| Drain Current - pulse (note 1) | IDM | 22* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 330 | mJ | |||
| Avalanche Current (note 1) | IAR | 5.5 | A | |||
| Repetitive Avalanche Energy (note 1) | EAR | 7.3 | mJ | |||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | |||
| Power Dissipation (TC=25) | PD | 59 | W | |||
| Power Dissipation -Derate above 25 | 0.48 | W/ | ||||
| Operating and Storage Temperature Range | TJTSTG | -55+150 | ||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 400 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.4 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=320V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.75A | - | 0.83 | 1.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=2.75Anote 4 | - | 4.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 550 | 720 | pF |
| Output capacitance | Coss | - | 85 | 110 | pF | |
| Reverse transfer capacitance | Crss | - | 22 | 29 | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=200V,ID=5.5A,RG=25 note 45 | - | 15 | 40 | ns |
| Turn-On rise time | tr | - | 55 | 120 | ns | |
| Turn-Off delay time | td(off) | - | 85 | 180 | ns | |
| Turn-Off Fall time | tf | - | 50 | 110 | ns | |
| Total Gate Charge | Qg | VDS =320V , ID=5.5A VGS =10V note 45 | - | 31 | 39 | nC |
| Gate-Source charge | Qgs | - | 4.0 | - | nC | |
| Gate-Drain charge | Qgd | - | 14 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 5.5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 22 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=5.5A | - | - | 1.5 | V |
| Reverse recovery time | trr | VGS=0V, IS=5.5A dIF/dt=100A/s (note 4) | - | 265 | - | ns |
| Reverse recovery charge | Qrr | - | 2.32 | - | C | |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | JCS730V/R | JCS730S/B/C | JCS730F |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.05 | /W | |||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | /W |
2409280130_Jilin-Sino-Microelectronics-JCS730C_C2693281.pdf
Related Products
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
