Trench IGBT JIAENSEMI JNG75T120LCS1 1200V 75A optimized for high speed switching and motor control
Key Attributes
Model Number:
JNG75T120LCS1
Product Custom Attributes
Td(off):
762ns
Pd - Power Dissipation:
694W
Td(on):
188ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
17pF
Input Capacitance(Cies):
9.86nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
281pF
Reverse Recovery Time(trr):
580ns
Switching Energy(Eoff):
6.8mJ
Turn-On Energy (Eon):
11.7mJ
Mfr. Part #:
JNG75T120LCS1
Package:
TO-264
Product Description
JNG75T120LCS1 IGBT
The JNG75T120LCS1 is a 1200V, 75A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor control, general inverters, and other soft-switching applications. Key features include a typical VCE(sat) of 1.65V, soft current turn-off waveforms, and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Product Code: JNG75T120LCS1
- Package: TO-264
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 30 | V | |||
| Continuous Collector Current (TC=25) | IC | 150 | A | |||
| Continuous Collector Current (TC=100) | IC | 75 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 225 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 75 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 225 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 694 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 278 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.18 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 25 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | 100 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE= + 30V, VCE= 0V | + 100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.0 | 7.0 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 75A | 1.65 | 2.3 | V | |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=75A | 472 | nC | ||
| Gate-Emitter Charge | Qge | 118 | nC | |||
| Gate-Collector Charge | Qgc | 251 | nC | |||
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 | 188 | ns | ||
| Turn-on Rise Time | tr | 115 | ns | |||
| Turn-off Delay Time | td(off) | 762 | ns | |||
| Turn-off Fall Time | tf | 137 | ns | |||
| Turn-on Switching Loss | Eon | 11.7 | mJ | |||
| Turn-off Switching Loss | Eoff | 6.8 | mJ | |||
| Total Switching Loss | Ets | 18.5 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 9860 | pF | ||
| Output Capacitance | Coes | 281 | pF | |||
| Reverse Transfer Capacitance | Cres | 17 | pF | |||
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=75A | 1.85 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 75A dIF/dt = 700A/us | 580 | ns | ||
| Diode peak Reverse Recovery Current | IRR | 31.3 | A | |||
| Diode Reverse Recovery Charge | QRR | 1250 | nC | |||
2509021810_JIAENSEMI-JNG75T120LCS1_C51484277.pdf
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