Jilin Sino Microelectronics JCS2N70VH IPAK N channel MOSFET designed for and power supply switching
Key Attributes
Model Number:
JCS2N70VH-IPAK
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.4pF
Number:
-
Output Capacitance(Coss):
44pF
Input Capacitance(Ciss):
359pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
JCS2N70VH-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS2N70H is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: RoHS
- Origin: China (implied by company contact info)
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max (Vgs=10V) () | Qg-typ (nC) |
| JCS2N70MFH-MF-B | JCS2N70MFH | TO-126F | 2 | 700 | 6.5 | 8.0 |
| JCS2N70VH-V-B | JCS2N70VH | IPAK | 2 | 700 | 6.5 | 8.0 |
| JCS2N70RH-R-B | JCS2N70RH | DPAK | 2 | 700 | 6.5 | 8.0 |
| JCS2N70CH-C-B | JCS2N70CH | TO-220C | 2 | 700 | 6.5 | 8.0 |
| JCS2N70FH-F-B | JCS2N70FH | TO-220MF | 2 | 700 | 6.5 | 8.0 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 700 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.73 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=560V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A | - | 6.0 | 6.5 | |
| Forward Transconductance | gfs | VDS = 40V, ID=1.0Anote 4 | - | 2.05 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 281 | 359 | pF |
| Output capacitance | Coss | - | - | 35 | 44 | pF |
| Reverse transfer capacitance | Crss | - | - | 5 | 6.4 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=350V,ID=2.0A,RG=25 note 45 | - | 7 | 23 | ns |
| Turn-On rise time | tr | - | - | 23 | 45 | ns |
| Turn-Off delay time | td(off) | - | - | 22 | 43 | ns |
| Turn-Off Fall time | tf | - | - | 24 | 46 | ns |
| Total Gate Charge | Qg | VDS =560V , ID=2A VGS =10V note 45 | - | 8 | 10 | nC |
| Gate-Source charge | Qgs | - | - | 1.5 | - | nC |
| Gate-Drain charge | Qgd | - | - | 3.5 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 2 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 8 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=2A dIF/dt=100A/s (note 4) | - | 230 | - | ns |
| Reverse recovery charge | Qrr | - | - | 1.00 | - | C |
| Parameter | Symbol | Max | Unit | JCS2N70RH/VH/MFH | JCS2N70CH | JCS2N70FH |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | /W | 4.19 | 2.32 | 4.45 |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | /W | 110 | 62.5 | 62.5 |
2409280200_Jilin-Sino-Microelectronics-JCS2N70VH-IPAK_C272570.pdf
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