TO247 Package Trench IGBT JIAENSEMI JNG60T65HS1 650V 60A Collector Current Semiconductor
Key Attributes
Model Number:
JNG60T65HS1
Product Custom Attributes
Pd - Power Dissipation:
312W
Td(off):
159ns
Td(on):
47ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
19pF
Input Capacitance(Cies):
2.662nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
102nC
Pulsed Current- Forward(Ifm):
180A
Output Capacitance(Coes):
206pF
Reverse Recovery Time(trr):
808ns
Switching Energy(Eoff):
2mJ
Turn-On Energy (Eon):
3mJ
Mfr. Part #:
JNG60T65HS1
Package:
TO-247
Product Description
Product Overview
The JNG60T65HS1 Trench IGBT from JIAEN Semiconductor offers advanced performance for various power electronic applications. It features high speed switching, higher system efficiency, and soft current turn-off waveforms, making it ideal for motor control, general inverters, and other soft-switching applications. The device boasts a 650V voltage rating and a 60A continuous collector current, with a typical saturation voltage of 2.1V.
Product Attributes
- Brand: JIAEN
- Model: JNG60T65HS1
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 120 | A | |||
| Continuous Collector Current (TC=100) | IC | 60 | A | |||
| Pulsed Collector Current | ICM | Note 1 | 180 | A | ||
| Diode Continuous Forward Current (TC=100) | IF | 60 | A | |||
| Diode Maximum Forward Current | IFM | Note 1 | 180 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 312 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 125 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.4 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.3 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 60A | - | 2.1 | 2.7 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=60A | - | 102 | - | nC |
| Gate-Emitter Charge | Qge | - | 23.4 | - | nC | |
| Gate-Collector Charge | Qgc | - | 51.1 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=60A RG=15 Inductive Load TC=25 | - | 47 | - | ns |
| Turn-on Rise Time | tr | - | 123 | - | ns | |
| Turn-off Delay Time | td(off) | - | 159 | - | ns | |
| Turn-off Fall Time | tf | - | 67 | - | ns | |
| Turn-on Switching Loss | Eon | - | 2.98 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.61 | - | mJ | |
| Total Switching Loss | Ets | - | 4.59 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 2662 | - | pF |
| Output Capacitance | Coes | - | 206 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 19 | - | pF | |
| Diode Forward Voltage | VF | IF=60A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 60A Rg=15 | - | 808 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 16.9 | - | A | |
| Diode Reverse Recovery Charge | QRR | - | 2143 | - | nC |
2509021810_JIAENSEMI-JNG60T65HS1_C51484260.pdf
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