1200V 450A Trench FS IGBT Half Bridge Module JIAENSEMI GN450HF120T3SS1 for inverter and servo drives

Key Attributes
Model Number: GN450HF120T3SS1
Product Custom Attributes
Pd - Power Dissipation:
2.419kW
Td(off):
820ns
Td(on):
127ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.41nF
Input Capacitance(Cies):
29.3nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@25mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
900A
Output Capacitance(Coes):
2.52nF
Switching Energy(Eoff):
73.5mJ
Turn-On Energy (Eon):
30.7mJ
Mfr. Part #:
GN450HF120T3SS1
Product Description

Product Overview

The JIAEN GN450HF120T3SS1 is a 1200V 450A Trench FS IGBT Half Bridge Module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC and DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.65V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.

Product Attributes

  • Brand: JIAEN
  • Model: GN450HF120T3SS1
  • Module Baseplate Material: Cu
  • Internal Isolation: Al2O3 (basic insulation, class 1, IEC 61140)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnits
IGBT Maximum Rated Values
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES+ 20V
Continuous Collector CurrentIC(TC=70,Tvj max=175)450A
Repetitive Peak Collector CurrentICRM(tp= 1 ms)900A
Maximum Power DissipationPD(TC=25,Tvj max=175)2419W
IGBT Characteristics
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=450A, Tvj=251.652.0V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=450A, Tvj=1752.15V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=25mA5.06.27.5V
Total Gate ChargeQgVGE=-15V+15V2.2uC
Input CapacitanceCiesVCE=25V, VGE=0V, f=100KHz29.3nF
Output CapacitanceCoes2.52nF
Reverse Transfer CapacitanceCres1.41nF
Collector-Emitter Leakage CurrentICESVCE=1200V, VGE=0V2.0mA
Gate Leakage Current, ForwardIGESVGE=20V, VCE=0V200nA
Gate Leakage Current, ReverseIGESVGE=-20V, VCE=0V-200nA
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=25127ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=25164ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=25820ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=25322ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=2530.7mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=2573.5mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=25104.2mJ
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=125138ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=125167ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=125932ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=125204ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=12541.1mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=12570.8mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=125111.9mJ
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=175142ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=175170ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=175980ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=175248ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=17549.0mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=17578.7mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=450A, RG=5, Inductive Load, Tvj=175127.7mJ
Short circuit currentIscVGE=15V, Tp10us, Tvj=175, Vcc=600V, VCEM Chip1200V1350A
Thermal resistance, junction to caseRth j-c0.062K/W
Temperature under switching conditionTvj op-40175
Diode Maximum Rated Values
Repetitive peak reverse voltageVRRM1200V
Continuous DC Forward CurrentIF450A
Repetitive Peak Collector CurrentIFRM(tp=1ms)900A
Diode Characteristics
Diode Forward VoltageVFIF=450A, VGE=0V, Tvj=251.82.4V
Diode Forward VoltageVFIF=450A, VGE=0V, Tvj=1751.9V
Peak reverse recovery currentIRMIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25212A
Diode Reverse Recovery ChargeQrrIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=2535.2uC
Reverse recovery energyErecIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=2518.1mJ
Peak reverse recovery currentIRMIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125276A
Diode Reverse Recovery ChargeQrrIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=12565.2uC
Reverse recovery energyErecIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=12530.8mJ
Peak reverse recovery currentIRMIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=175331A
Diode Reverse Recovery ChargeQrrIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=17590.9uC
Reverse recovery energyErecIC=450A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=17545.8mJ
Thermal resistance, junction to caseRth j-c0.108K/W
Temperature under switching conditionTvj op-40175
Module Parameters
Module Isolation test voltageVISOLRMS, f=50 Hz, t=1 min4.0kV
Clearance distance in airTerminal to terminal10mm
Surface creepage distanceTerminal to terminal13mm
Comperative tracking indexCTI>200
Storage temperatureTstg-40150
Mounting torque for module mountingM6 screws3~6Nm

2509021810_JIAENSEMI-GN450HF120T3SS1_C51484293.pdf

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