1200V 50A IGBT half bridge module JIAENSEMI GL50HF120T1UA1 with high RBSOA and low turn off losses
Key Attributes
Model Number:
GL50HF120T1UA1
Product Custom Attributes
Td(off):
230ns
Pd - Power Dissipation:
200W
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.14nF
Input Capacitance(Cies):
3.6nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1.7mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
100A
Switching Energy(Eoff):
3mJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
GL50HF120T1UA1
Product Description
Product Overview
The GL50HF120T1UA1 is a 1200V, 50A IGBT half-bridge module featuring Trench Field-stop Technology for high performance and reliability. It offers a low VCE(sat) of 2.1V (typ.), high RBSOA capability, and low turn-off losses. This module is ideal for applications such as welders, power supplies, UPS, inverters, and industrial motor drivers.
Product Attributes
- Brand: JIAEN Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| IGBT Maximum Rated Values | ||||||
| Collector-Emitter Voltage | VCES | Tvj=25 | 1200 | V | ||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current | IC | TC=80,Tvj max=150 | 50 | A | ||
| Repetitive Peak Collector Current | ICRM | 100 | A | |||
| Maximum Power Dissipation | PD | TC=25,Tvj max=150 | 200 | W | ||
| IGBT Characteristics | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tvj=25 | 1.6 | 2.1 | 2.5 | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=1.7mA, Tvj=25 | 5.2 | 5.8 | 6.4 | V |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 3.6 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.14 | nF | |||
| Collector-Emitter Leakage Current | ICES | VCE=1200V, VGE=0V, Tvj=25 | 10 | uA | ||
| Gate-Emitter Leakage Current, Forward | IGES | VGE=20V, VCE=0V, Tvj=25 | 500 | nA | ||
| Gate-Emitter Leakage Current, Reverse | VGE=-20V, VCE=0V, Tvj=25 | -500 | nA | |||
| Turn-on Delay Time | td(on) | Inductive Load, VCE = 600V, IC = 50A, VGE = 15V, RGon = 2.0, Tvj=25 | 40 | ns | ||
| Turn-on Rise Time | tr | Inductive Load, Tvj=25 | 24 | ns | ||
| Turn-off Delay Time | td(off) | Inductive Load, VCE = 600V, IC = 50A, VGE = 15V, RGoff = 2.0, Tvj=25 | 230 | ns | ||
| Turn-off Fall Time | tf | Inductive Load, Tvj=25 | 160 | ns | ||
| Turn-on Switching Loss | Eon | Inductive Load, VCE = 600V, IC = 50A, VGE = 15V, RGon = 2.0, RGoff = 2.0, Tvj=25 | 2 | mJ | ||
| Turn-off Switching Loss | Eoff | Inductive Load, Tvj=25 | 3 | mJ | ||
| Thermal Resistance, Junction to Case | Rth j-c | Per IGBT | 0.16 | K/W | ||
| Temperature Under Switching Condition | Tvj op | -40 | 175 | |||
| Diode Maximum Rated Values | ||||||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | |||
| Continuous DC Forward Current | IF | 50 | A | |||
| Repetitive Peak Collector Current | IFRM | 100 | A | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VF | IF = 50A, VGE = 0V, Tvj=25 | 2.0 | 2.4 | V | |
| Peak Reverse Recovery Current | IRM | Rg=15 L=100uH, IF = 50A, VR=600V, VGE = 15V, Tvj=25 | - | A | ||
| Reverse Recovery Charge | Qrr | Tvj=25 | - | uC | ||
| Reverse Recovery Energy | Erec | Tvj=25 | - | mJ | ||
| Temperature Under Switching Condition | Tvj op | -40 | 150 | |||
| Module | ||||||
| Thermal Resistance, Case to Heatsink | Rthc-h | Per Module | 0.25 | K/W | ||
| Storage Temperature | Tstg | -40 | 150 | |||
| Module Mounting Torque | M6 screws | 3.0 | 6.0 | Nm | ||
| Terminal Mounting Torque | M6 screws | 3.0 | 6.0 | Nm | ||
| Weight | 310 | g | ||||
| Isolation Test Voltage | VISO | RMS, f=50 Hz, t=1 min | 2.5 | kV | ||
2509021810_JIAENSEMI-GL50HF120T1UA1_C51484287.pdf
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