Power transistor JIAENSEMI JNG15T65PS1 650V 15A IGBT module designed for motor control and inverters
Key Attributes
Model Number:
JNG15T65PS1
Product Custom Attributes
Pd - Power Dissipation:
104W
Td(off):
94ns
Td(on):
16ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7pF
Input Capacitance(Cies):
629pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
45pF
Reverse Recovery Time(trr):
120ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
310uJ
Mfr. Part #:
JNG15T65PS1
Package:
TO-220
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency, suitable for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 650V, 15A rating, a typical VCE(sat) of 1.9V, high-speed switching capabilities, and soft current turn-off waveforms with square RBSOA.
Product Attributes
- Brand: JIAEN
- Model: JNG15T65PS1
- Package: TO-220C
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current | IC | TC=25 | 30 | A | ||
| Continuous Collector Current | IC | TC=100 | 15 | A | ||
| Pulsed Collector Current | ICM | Note 1 | 45 | A | ||
| Diode Continuous Forward Current | IF | TC=100 | 15 | A | ||
| Diode Maximum Forward Current | IFM | Note 1 | 45 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation | PD | TC=25 | 104 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 41.7 | W | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to Case (IGBT) | Rth j-c | 1.2 | / W | |||
| Thermal Resistance, Junction to Case (Diode) | Rth j-c | 2.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | 100 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | 100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | 6.5 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 15A | 1.9 | 2.5 | V | |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=15A | 40.7 | nC | ||
| Gate-Emitter Charge | Qge | 4.19 | nC | |||
| Gate-Collector Charge | Qgc | 30.7 | nC | |||
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=15A RG=15 Inductive Load TC=25 | 16 | ns | ||
| Turn-on Rise Time | tr | 20 | ns | |||
| Turn-off Delay Time | td(off) | 94 | ns | |||
| Turn-off Fall Time | tf | 118 | ns | |||
| Turn-on Switching Loss | Eon | 0.31 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.32 | mJ | |||
| Total Switching Loss | Ets | 0.63 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 629 | pF | ||
| Output Capacitance | Coes | 45 | pF | |||
| Reverse Transfer Capacitance | Cres | 7 | pF | |||
| Diode Forward Voltage | VF | IF=15A | 1.55 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 15A Rg=15 | 120 | ns | ||
| Diode peak Reverse Recovery Current | IRR | 17.5 | A | |||
| Diode Reverse Recovery Charge | Qrr | 690 | nC |
2509021810_JIAENSEMI-JNG15T65PS1_C51484244.pdf
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