High current IGBT JIAENSEMI JNG25T65AI offering 25A continuous collector current at 100 degrees Celsius
Key Attributes
Model Number:
JNG25T65AI
Product Custom Attributes
Td(off):
75ns
Pd - Power Dissipation:
69.4W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Input Capacitance(Cies):
978pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
90pF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
660uJ
Mfr. Part #:
JNG25T65AI
Package:
TO-3P
Product Description
JNG25T65AI IGBT
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA.
Product Attributes
- Brand: JIAEN
- Model: JNG25T65AI
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | ±30 | V | |||
| Continuous Collector Current (TC=25) | IC | 50 | A | |||
| Continuous Collector Current (TC=100) | IC | 25 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 75 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 25 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 75 | A | |||
| Short Circuit Withstand Time | tsc | 10 | µs | |||
| Maximum Power Dissipation (TC=25) | PD | 69.4 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 27.8 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 1.8 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 3.0 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 65 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | µA |
| Gate Leakage Current, Forward | IGES | VGE=±20V, VCE= 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 25A | - | 2.1 | 2.7 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=25A | - | 31.2 | - | nC |
| Gate-Emitter Charge | Qge | - | 7.7 | - | nC | |
| Gate-Collector Charge | Qgc | - | 13.3 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=25A RG=15Ω Inductive Load TC=25 ℃ | - | 22 | - | ns |
| Turn-on Rise Time | tr | - | 44 | - | ns | |
| Turn-off Delay Time | td(off) | - | 75 | - | ns | |
| Turn-off Fall Time | tf | - | 88 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.66 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.49 | - | mJ | |
| Total Switching Loss | Ets | - | 1.15 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 978 | - | pF |
| Output Capacitance | Coes | - | 90 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 8 | - | pF | |
| Diode Forward Voltage | VF | IF=25A | - | 1.65 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 25ARg=15Ω | - | 60 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 15.6 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 518 | - | nC |
2509021810_JIAENSEMI-JNG25T65AI_C51484279.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
