1200V 15A IGBT device JIAENSEMI JNG15T120HS suitable for energy power inverters and induction heating applications
Key Attributes
Model Number:
JNG15T120HS
Product Custom Attributes
Pd - Power Dissipation:
108W
Td(off):
83ns
Td(on):
37ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
45pF
Input Capacitance(Cies):
2.46nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-40℃~+155℃
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
95pF
Reverse Recovery Time(trr):
62ns
Switching Energy(Eoff):
480uJ
Turn-On Energy (Eon):
1.24mJ
Mfr. Part #:
JNG15T120HS
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. The JNG15T120HS features 1200V, 15A, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: Semiconductor Co., Ltd
Technical Specifications
| Symbol | Parameter | Value | Units | Notes |
| VCES | Collector-Emitter Voltage | 1200 | V | |
| VGES | Gate-Emitter Voltage | + 30 | V | |
| IC | Continuous Collector Current | 30 | A | ( TC=25 ) |
| 15 | A | ( TC=100) | ||
| ICM | Pulsed Collector Current | 45 | A | (Note 1) |
| IF | Diode Continuous Forward Current | 15 | A | ( TC=100 ) |
| IFM | Diode Maximum Forward Current | 45 | A | (Note 1) |
| tsc | Short Circuit Withstand Time | 10 | us | |
| PD | Maximum Power Dissipation | 108 | W | ( TC=25 ) |
| 43 | W | ( TC=100) | ||
| TJ | Operating Junction Temperature Range | -40 to +155 | ||
| TSTG | Storage Temperature Range | -55 to +155 | ||
| Rth j-c | Thermal Resistance, Junction to case | 1.15 | / W | for IGBT |
| 1.5 | / W | for Diode | ||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W |
2509021810_JIAENSEMI-JNG15T120HS_C51484264.pdf
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