Energy NPT IGBT JIAENSEMI JNG25N120AI suitable for industrial inverter and induction heating power modules
Key Attributes
Model Number:
JNG25N120AI
Product Custom Attributes
Pd - Power Dissipation:
210W
Td(off):
290ns
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
150pF
Input Capacitance(Cies):
1.25nF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.25mA
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
210pF
Reverse Recovery Time(trr):
190ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
JNG25N120AI
Package:
TO-3P
Product Description
JNG25N120AI IGBT
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Technology: NPT IGBT
Technical Specifications
| Parameter | Condition | Value | Unit |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) | TC=25 | 45 | A |
| Continuous Collector Current (IC) | TC=100 | 25 | A |
| Pulsed Collector Current (ICM) | Note 1 | 80 | A |
| Diode Continuous Forward Current (IF) | TC=100 | 25 | A |
| Diode Maximum Forward Current (IFM) | Note 1 | 60 | A |
| Short Circuit Withstand Time (tsc) | VGE=15V, VCC960V, TJ150 | 10 | s |
| Maximum Power Dissipation (PD) | TC=25 | 210 | W |
| Maximum Power Dissipation (PD) | TC=100 | 100 | W |
| Operating Junction Temperature Range (TJ) | -55 to +150 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.48 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 0.87 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | /W | |
| Collector-Emitter Breakdown Voltage (BVces) | VGE=0V, IC=250A | 1200 | V |
| Collector-Emitter Leakage Current (ICES) | VCE=1200V, VGE=0V | 250 | A |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE=0V | 100 | nA |
| Gate Leakage Current, Reverse | VGE=-30V, VCE=0V | -100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE=VCE, IC=250A | 4.5 - 5.0 - 5.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=25 | 2.2 - 2.6 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=125 | 2.7 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=150 | 3.0 | V |
| Total Gate Charge (Qg) | VCC=960V, VGE=15V, IC=25A | 130 | nC |
| Gate-Emitter Charge (Qge) | 30 | nC | |
| Gate-Collector Charge (Qgc) | 70 | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 22 | ns |
| Turn-on Rise Time (tr) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 35 | ns |
| Turn-off Delay Time (td(off)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 290 | ns |
| Turn-off Fall Time (tf) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 170 | ns |
| Turn-on Switching Loss (Eon) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 2.2 | mJ |
| Turn-off Switching Loss (Eoff) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 1.4 | mJ |
| Total Switching Loss (Ets) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 3.6 | mJ |
| Input Capacitance (Cies) | VCE=25V, VGE=0V, f=1MHz | 1250 | pF |
| Output Capacitance (Coes) | VCE=25V, VGE=0V, f=1MHz | 210 | pF |
| Reverse Transfer Capacitance (Cres) | VCE=25V, VGE=0V, f=1MHz | 150 | pF |
| Integrated gate resistor (RGint) | 3.8 | ||
| Diode Forward Voltage (VF) | IF=25A, TC=25 | 2.3 - 2.5 | V |
| Diode Reverse Recovery Time (trr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 190 | ns |
| Diode peak Reverse Recovery Current (Irr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 20 | A |
| Diode Reverse Recovery Charge (Qrr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 1600 | nC |
2509021810_JIAENSEMI-JNG25N120AI_C51484282.pdf
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