High Ruggedness 650V 15A IGBT Module JIAENSEMI JNG15T65FJS1 Suitable for Inverter Applications
Key Attributes
Model Number:
JNG15T65FJS1
Product Custom Attributes
Pd - Power Dissipation:
39W
Td(off):
104ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
15pF
Input Capacitance(Cies):
1.055nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.4V@1mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
57pF
Reverse Recovery Time(trr):
55ns
Switching Energy(Eoff):
270uJ
Turn-On Energy (Eon):
300uJ
Mfr. Part #:
JNG15T65FJS1
Package:
TO-220F
Product Description
JNG15T65FJS1 IGBT Module
The JNG15T65FJS1 is a 650V, 15A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.6V at VGE=15V and IC=15A.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Product Code: JNG15T65FJS1
- Package Type: TO-220F
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage (VCES) | 650 | V | |||
| Gate-Emitter Voltage (VGES) | +20 | V | |||
| Continuous Collector Current (IC) (TC=25) | 30 | A | |||
| Continuous Collector Current (IC) (TC=100) | 15 | A | |||
| Pulsed Collector Current (ICM) (Note 1) | 60 | A | |||
| Diode Continuous Forward Current (IF) (TC=100) | 15 | A | |||
| Diode Maximum Forward Current (IFM) (Note 1) | 60 | A | |||
| Short Circuit Withstand Time (tsc) | 10 | us | |||
| Maximum Power Dissipation (PD) (TC=25) | 39 | W | |||
| Maximum Power Dissipation (PD) (TC=100) | 19 | W | |||
| Operating Junction Temperature Range (TJ) | -40 | +175 | |||
| Storage Temperature Range (TSTG) | -55 | +150 | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 3.8 | / W | |||
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 4.2 | / W | |||
| Thermal Resistance, Junction to Ambient (Rth j-a) | 50 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 650V, VGE= 0V | - | - | 50 | uA |
| Gate Leakage Current, Forward (IGES) | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC=1mA | 5.4 | 5.6 | 5.9 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 15A | - | 1.6 | - | V |
| Total Gate Charge (Qg) | VCC=520V, VGE=15V, IC=15A | - | 55 | - | nC |
| Turn-on Delay Time (td(on)) | VCC=400V, VGE=15V, IC=15A, RG=10, Inductive Load, TC=25 | - | 17 | - | ns |
| Turn-on Rise Time (tr) | - | 14 | - | ns | |
| Turn-off Delay Time (td(off)) | - | 104 | - | ns | |
| Turn-off Fall Time (tf) | - | 46 | - | ns | |
| Turn-on Switching Loss (Eon) | - | 0.30 | - | mJ | |
| Turn-off Switching Loss (Eoff) | - | 0.27 | - | mJ | |
| Total Switching Loss (Ets) | - | 0.57 | - | mJ | |
| Input Capacitance (Cies) | VCE=30V, VGE=0V, f = 1MHz | - | 1055 | - | pF |
| Output Capacitance (Coes) | - | 57 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 15 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||||
| Diode Forward Voltage (VF) | IF=15A | - | 1.4 | - | V |
| Diode Reverse Recovery Time (trr) | VCE = 400V, IF = 15A, dif/dt = 600A/us | - | 55 | - | ns |
| Diode peak Reverse Recovery Current (Irr) | - | 9.5 | - | A | |
| Diode Reverse Recovery Charge (Qrr) | - | 220 | - | nC | |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2509021810_JIAENSEMI-JNG15T65FJS1_C51484240.pdf
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