Trench IGBT 650V 15A JIAENSEMI JNG15T65HS1 designed for energy motor control and inverter solutions
Key Attributes
Model Number:
JNG15T65HS1
Product Custom Attributes
Pd - Power Dissipation:
104W
Td(off):
94ns
Td(on):
16ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7pF
Input Capacitance(Cies):
629pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
45pF
Reverse Recovery Time(trr):
120ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
310uJ
Mfr. Part #:
JNG15T65HS1
Package:
TO-247
Product Description
Product Overview
The JIAEN JNG15T65HS1 is a 650V, 15A Trench IGBT designed for applications requiring lower losses and higher energy efficiency. It features high-speed switching, soft current turn-off waveforms, and a square RBSOA. Ideal for motor control, general inverters, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Product Series: JNG15T65HS1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 30 | A | |||
| Continuous Collector Current (TC=100) | IC | 15 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 45 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 15 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 45 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 104 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 41.7 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 1.2 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.8 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | 100 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | 100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | 6.5 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 15A | 1.9 | 2.5 | V | |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=15A | 40.7 | nC | ||
| Gate-Emitter Charge | Qge | 4.19 | nC | |||
| Gate-Collector Charge | Qgc | 30.7 | nC | |||
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=15A RG=15 Inductive Load TC=25 | 16 | ns | ||
| Turn-on Rise Time | tr | 20 | ns | |||
| Turn-off Delay Time | td(off) | 94 | ns | |||
| Turn-off Fall Time | tf | 118 | ns | |||
| Turn-on Switching Loss | Eon | 0.31 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.32 | mJ | |||
| Total Switching Loss | Ets | 0.63 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 629 | pF | ||
| Output Capacitance | Coes | 45 | pF | |||
| Reverse Transfer Capacitance | Cres | 7 | pF | |||
| Diode Forward Voltage | VF | IF=15A | 1.55 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 15A Rg=15 | 120 | ns | ||
| Diode peak Reverse Recovery Current | IRR | 17.5 | A | |||
| Diode Reverse Recovery Charge | Qrr | 690 | nC |
2509021810_JIAENSEMI-JNG15T65HS1_C51484243.pdf
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