Switching MOSFET Jilin Sino Microelectronics JCS9N50FT 220MF with low gate charge and RoHS compliance
Key Attributes
Model Number:
JCS9N50FT-220MF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
1.06nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
JCS9N50FT-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS9N50T is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies and electronic lamp ballasts. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) | Applications |
| JCS9N50CT-C-B JCS9N50CT-C-BR | N/A | TO-220C | 9 | 500 | 0.75 | 29 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| JCS9N50FT-F-B JCS9N50FT-F-BR | N/A | TO-220MF | 9 | 500 | 0.75 | 29 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.52 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.5A | - | 0.64 | 0.75 | |
| Forward Transconductance | gfs | VDS = 40V, ID=4.5A | - | 6.6 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 810 | 1060 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 155 | 190 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 26 | 33 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=9A,RG=25 | - | 64 | 83 | ns |
| Turn-On rise time | tr | VDD=250V,ID=9A,RG=25 | - | 52 | 68 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=9A,RG=25 | - | 101 | 135 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=9A,RG=25 | - | 66 | 91 | ns |
| Total Gate Charge | Qg | VDS =400V , ID=9A VGS =10V | - | 29 | 38 | nC |
| Gate-Source charge | Qgs | VDS =400V , ID=9A VGS =10V | - | 6.3 | - | nC |
| Gate-Drain charge | Qgd | VDS =400V , ID=9A VGS =10V | - | 12 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 9 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 36 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=9A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=9A dIF/dt=100A/s | - | 341 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=9A dIF/dt=100A/s | - | 2.97 | - | C |
| Parameter | Symbol | Value | Unit |
| Absolute Maximum Ratings (Tc=25) | |||
| Drain-Source Voltage | VDSS | 500 | V |
| Continuous Drain Current | ID | 9* | A |
| Drain Current - pulse | IDM | 36* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy | EAS | 369 | mJ |
| Avalanche Current | IAR | 9 | A |
| Repetitive Avalanche Current | EAR | 15.8 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns |
| Power Dissipation | PD | 158 | W |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |
| Thermal Characteristic | |||
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.79 / 2.6 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS9N50FT-220MF_C272551.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
