Low gate charge MOSFET Jilin Sino Microelectronics JCS2N65FB 220MF 650V 2A for power supply circuits
Key Attributes
Model Number:
JCS2N65FB-220MF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
-
Output Capacitance(Coss):
80pF
Input Capacitance(Ciss):
560pF
Pd - Power Dissipation:
360mW
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
JCS2N65FB-220MF
Package:
TO-220MF
Product Description
Product Overview
The JCS2N65B is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: JCS
- Certifications: RoHS
- Halogen Free: No (for some variants)
Technical Specifications
| Order Code | Marking | Package | Device Weight (typ) | Halogen Free | Main Characteristics (ID, VDSS, Rds(on), Qg) |
| JCS2N65VB-O-V-N-B | JCS2N65VB | IPAK | 0.35 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65RB-O-R-N-B | JCS2N65RB | DPAK | 0.30 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65CB-O-C-N-B | JCS2N65CB | TO-220C | 2.15 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65FB-O-F-N-B | JCS2N65FB | TO-220MF | 2.20 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65MB-O-M-M-B | JCS2N65MB | TO-126 | 0.7 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65MFB-O-M-M-B | JCS2N65MFB | TO-126F | 1.5 g | NO | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65CB-R-C-N-B | JCS2N65CB | TO-220C | 2.15 g | YES | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
| JCS2N65FB-R-F-N-B | JCS2N65FB | TO-220MF | 2.20 g | YES | ID: 2.0 A, VDSS: 650 V, Rds(on) (Vgs=10V): 5.0 MAX, Qg-typ: 5.9 nC |
Absolute Maximum Ratings
| Parameter | Symbol | Value (JCS2N65VB/RB/MB/MFB) | Value (JCS2N65 CB) | Value (JCS2N65 FB) | Unit |
| Drain-Source Voltage | VDSS | 650 | 650 | 650 | V |
| Drain Current-continuous (Tc=25) | ID | 1.9 | 2.0 | 2.0* | A |
| Drain Current-continuous (Tc=100) | ID | 1.1 | 1.3 | 1.3* | A |
| Drain Current pulse (note 1) | IDM | 6.0 | 6.0 | 6.0* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 231 | 231 | 231 | mJ |
| Avalanche Current (note 1) | IAR | 1.9 | 1.9 | 1.9 | A |
| Repetitive Avalanche Current (note 1) | EAR | 4.4 | 4.4 | 4.4 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | 4.5 | V/ns |
| Power Dissipation (Tc=25) | PD | 44 | 54 | 45.5 | W |
| Power Dissipation -Derate above 25 | - | 0.35 | 0.43 | 0.36 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=1mA, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=1A | - | 3.9 | 5.0 | |
| Forward Transconductance | gfs | VDS=40V, ID=1.0A (note 4) | - | 2.05 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 261 | 560 | pF |
| Output capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | 36 | 80 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 2.2 | 7 | pF |
| Turn-On delay time | td(on) | VDD=325V,ID=2.0A,RG=25 (note 4,5) | - | 20.5 | 50 | ns |
| Turn-On rise time | tr | VDD=325V,ID=2.0A,RG=25 (note 4,5) | - | 145 | 230 | ns |
| Turn-Off delay time | td(off) | VDD=325V,ID=2.0A,RG=25 (note 4,5) | - | 25.2 | 60 | ns |
| Turn-Off Fall time | tf | VDD=325V,ID=2.0A,RG=25 (note 4,5) | - | 11.2 | 35 | ns |
| Total Gate Charge | Qg | VDS=520V, ID=2.0A, VGS=10V (note 4,5) | - | 5.8 | 10 | nC |
| Gate-Source charge | Qgs | VDS=520V, ID=2.0A, VGS=10V (note 4,5) | - | 1.26 | - | nC |
| Gate-Drain charge | Qgd | VDS=520V, ID=2.0A, VGS=10V (note 4,5) | - | 2.2 | - | nC |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 1.9 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 6.0 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=2.0A, dIF/dt=100A/s (note 4) | - | 270 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=2.0A, dIF/dt=100A/s (note 4) | - | 1.0 | - | C |
Thermal Characteristics
| Parameter | Symbol | Value (JCS2N65VB/RB/MB/MFB) | Value (JCS2N65 FB) | Value (JCS2N65 CB) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.87 | 5.50 | 2.75 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 40.38 | - | /W |
2411201841_Jilin-Sino-Microelectronics-JCS2N65FB-220MF_C272512.pdf
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