industrial power device Jilin Sino-Microelectronics 3CT12B Reverse Blocking Triode Thyristor SCR for AC switching
Key Attributes
Model Number:
3CT12B
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
25mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
190A@10ms
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1.3V
Operating Temperature:
-40℃~+125℃@(Tj)
Mfr. Part #:
3CT12B
Package:
TO-220
Product Description
Product Overview
The 3CT12B is a Reverse Blocking Triode Thyristor (SCR) designed for AC switching and phase control applications. It features a glass-passivated mesa chip for high reliability and uniformity, low on-state voltage, and high surge current capability. This RoHS compliant product is suitable for various industrial and electronic control systems requiring efficient power management.
Product Attributes
- Brand: Not explicitly mentioned, but product code suggests a specific manufacturer.
- Material: Glass-passivated mesa chip.
- Certifications: RoHS compliant.
- Package Type: TO-220C.
Technical Specifications
| Model | Parameter | Value | Unit | Notes |
|---|---|---|---|---|
| 3CT12B | IT(RMS) - RMS on-state current (180 Conduction angle) | 16 | A | Tc = 110 |
| 3CT12B | VDRM/VRRM - Peak repetitive off-state voltage / Peak repetitive reverse voltage | 800 | V | |
| 3CT12B | IGT - Gate trigger current | 1-25 | mA | VD=12V, RL=33 |
| 3CT12B | IT(AV) - Average on-state current (180 Conduction angle) | 10 | A | Tc = 110 |
| 3CT12B | ITSM - Non-repetitive surge peak on-state current | 200 | A | Tp=8.3ms, Tc = 25 |
| 3CT12B | ITSM - Non-repetitive surge peak on-state current | 190 | A | Tp=10ms, Tc = 25 |
| 3CT12B | I2t - I2t Value for using | 200 | As | t=10ms, Tc = 25 |
| 3CT12B | dI/dt - Critical rate of rise of on-state current | 50 | A/s | IG=2IGT, tr100ns, F=60Hz, Tc = 125 |
| 3CT12B | IGM - Peak gate current | 5 | A | Tp=20s, Tc = 125 |
| 3CT12B | PG(AV) - Average gate power | 1 | W | Tc = 125 |
| 3CT12B | Tstg - Storage junction temperature range | -40 to +150 | ||
| 3CT12B | Tj - Operation junction temperature range | -40 to +125 | ||
| 3CT12B | VRGM - Maximum peak reverse gate voltage | 5 | V | |
| 3CT12B | VGT - Gate trigger voltage | 1.3 | V | VD=12V, RL=33 |
| 3CT12B | VGD - Non-trigger gate-source voltage | 0.2 | V | VD=VDRM, RL=3.3K, Tj=125 |
| 3CT12B | IH - Holding current | 40 | mA | |
| 3CT12B | IL - Latching current | 60 | mA | |
| 3CT12B | dV/dt - Critical rate of rise of off-state voltage | 1000 | V/s | VDM=67% VDRM, gate open, Tj=125 (MAX) |
| 3CT12B | VTM - Peak on-state voltage | 1.6 | V | ITM=32A, Tp=380s, Tj=25 |
| 3CT12B | VtO - Threshold voltage | 0.77 | V | Tj=125 |
| 3CT12B | Rd - Dynamic resistance | 23 | m | Tj=125 |
| 3CT12B | IDRM - Peak on-state leakage current | 5 | uA | VDRM = VRRM, Tj=25 |
| 3CT12B | IRRM - Peak reverse leakage current | 2 | mA | VDRM = VRRM, Tj=125 |
| 3CT12B | Rth(j-c) - Thermal resistance junction to case (DC) | 1.1 | /W | |
| 3CT12B | Rth(j-a) - Thermal resistance junction to ambient (DC) | 60 | /W |
Package Mechanical Data: TO-220C (Dimensions in mm)
Order Codes:
- 3CT12B-CA-C (Halogen-Bag)
- 3CT12B-CA-CR (Halogen-Free-Bag)
- 3CT12B-CA-B (Halogen-Tube)
- 3CT12B-CA-BR (Halogen-Free-Tube)
Marking: 3CT12B
2411201846_Jilin-Sino-Microelectronics-3CT12B_C272506.pdf
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