Jilin Sino Microelectronics JCS4N65FB N channel transistor designed for power switching and UPS power
Key Attributes
Model Number:
JCS4N65FB
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
-
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
642pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
JCS4N65FB
Package:
TO-220MF
Product Description
Product Overview
The JCS4N65B is a N-channel enhancement mode field-effect transistor designed for high-efficiency switch-mode power supplies, electronic lamp ballasts, and UPS power applications. It features low gate charge, low Crss (typical 9pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: Halogen Free, RoHS
Technical Specifications
| Order Code | Marking | Package | Device Weight (typ) | ID (A) | VDSS (V) | Rds(on) (@Vgs=10V) () | Qg (nC) |
| JCS4N65VB-O-V-N-B | JCS4N65VB | IPAK | 0.35 g | 4.0 | 650 | 2.5 | 13.3 |
| JCS4N65RB-O-R-N-B | JCS4N65RB | DPAK | 0.30 g | 4.0 | 650 | 2.5 | 13.3 |
| JCS4N65CB-O-C-N-B | JCS4N65CB | TO-220C | 2.15 g | 4.0 | 650 | 2.5 | 13.3 |
| JCS4N65FB-O-F-N-B | JCS4N65FB | TO-220MF | 2.20 g | 4.0 | 650 | 2.5 | 13.3 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS4N65VB/RB | JCS4N65CB | JCS4N65FB | Unit |
| Drain-Source Voltage | VDSS | 650 | 650 | 650 | V |
| Drain Current -continuous | ID (T=25) | 4.0* | 4.0* | 4.0* | A |
| Drain Current -continuous | ID (T=100) | 2.5* | 2.5* | 2.5* | A |
| Drain Current - pulse (note 1) | IDM | 16 | 16* | 16* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 240 | 240 | 240 | mJ |
| Avalanche Current (note 1) | IAR | 4.0 | 4.0 | 4.0 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 10.0 | 10.0 | 10.0 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | 5.5 | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 51 | 100 | 33 | W |
| Power Dissipation -Derate above 25 | - | 0.39 | 0.80 | 0.26 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2A | - | 1.8 | 2.5 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2Anote 4 | - | 4.7 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 490 | 642 | pF |
| Output capacitance | Coss | - | - | 95 | 124 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 9 | 12 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=4A,RG=25 note 45 | - | 16 | 42 | ns |
| Turn-On rise time | tr | - | 49 | 111 | ns | |
| Turn-Off delay time | td(off) | - | 46 | 102 | ns | |
| Turn-Off Fall time | tf | - | 37 | 84 | ns | |
| Total Gate Charge | Qg | VDS =480V , ID=4A VGS =10V note 45 | - | 13.3 | 19 | nC |
| Gate-Source charge | Qgs | - | 3.6 | - | nC | |
| Gate-Drain charge | Qgd | - | 4.9 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | - | 330 | - | ns | |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 2.67 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS4N65VB /RB | JCS4N65CB | JCS4N65FB | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.50 | 1.25 | 3.79 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 83 | 62.5 | 62.5 | /W |
2410121222_Jilin-Sino-Microelectronics-JCS4N65FB_C2693270.pdf
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