N channel enhancement mode MOSFET Jilin Sino Microelectronics JCS650C for switch mode power supplies
Key Attributes
Model Number:
JCS650C
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
-
Output Capacitance(Coss):
470pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
158W
Gate Charge(Qg):
136nC@10V
Mfr. Part #:
JCS650C
Package:
TO-220C
Product Description
Product Overview
The JCS650 is a N-channel enhancement mode MOSFET designed for high-efficiency applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS-compliant product is suitable for high-frequency switch mode power supplies, electronic lamp ballasts, and UPS power systems.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Main Characteristics (ID, VDSS, Rds(on)-max, Qg-typ) | Applications | Features |
| JCS650C-C-B JCS650C-C-BR | JCS650C | TO-220C | ID: 28.0A, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS | Low gate charge, Low Crss (typical 81pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS650F-F-B JCS650F-F-BR | JCS650F | TO-220MF | ID: 28.0A*, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS | Low gate charge, Low Crss (typical 81pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS650S-S-B JCS650S-S-BR JCS650S-S-A JCS650S-S-AR | JCS650S | TO-263 | ID: 28.0A*, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS | Low gate charge, Low Crss (typical 81pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 200 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.19 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A |
| VDS=160V, TC=125 | - | - | 10 | A | ||
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=14.0A | - | 68 | 85 | m |
| Forward Transconductance | gfs | VDS = 40V , ID=14.0Anote 4 | - | 24 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | 2879 | 3742 | pF | |
| Output capacitance | Coss | - | 362 | 470 | pF | |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 81 | 105 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=100V,ID=28A,RG=25 VGS =10V note 45 | - | 28 | 69 | ns |
| Turn-On rise time | tr | - | 251 | 494 | ns | |
| Turn-Off delay time | td(off) | - | 309 | 617 | ns | |
| Turn-Off Fall time | tf | - | 220 | 412 | ns | |
| Total Gate Charge | Qg | VDS =160V , ID=28A VGS =10Vnote 45 | - | 103 | 136 | nC |
| Gate-Source charge | Qgs | - | 16 | - | nC | |
| Gate-Drain charge | Qgd | - | 53 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 28 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 112 | A | |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | VGS=0V, IS=28A | - | 1.4 | - | V |
| Reverse recovery time | trr | - | 218 | - | ns | |
| Reverse recovery charge | Qrr | VGS=0V, IS=28A dIF/dt=100A/s (note 4) | - | 1.91 | - | C |
2409271302_Jilin-Sino-Microelectronics-JCS650C_C2693279.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
