Power MOSFET Jilin Sino Microelectronics JCS3910R DPAK with low gate charge and fast switching speed
Key Attributes
Model Number:
JCS3910R-DPAK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+175℃
RDS(on):
115mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
119pF
Number:
1 N-channel
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
828pF
Pd - Power Dissipation:
79W
Gate Charge(Qg):
27nC
Mfr. Part #:
JCS3910R-DPAK
Package:
DPAK
Product Description
Product Overview
The JCS3910 is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: JCS
- Origin: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | VDSS (V) | ID (A) | RDS(ON)-max (@VGS=10V) (m) | Qg-typ (nC) |
| JCS3910V-V-B / JCS3910V-V-BR | N/A | IPAK | 100 | 16* | 115 | 18.9 |
| JCS3910R-R-B / JCS3910R-R-BR / JCS3910R-R-A / JCS3910R-R-AR | JCS3910R | DPAK | 100 | 16* | 115 | 18.9 |
| JCS3910F-F-B / JCS3910F-F-BR | N/A | TO-220MF | 100 | 16* | 115 | 18.9 |
Absolute Maximum Ratings
| Parameter | Symbol | JCS3910V/R | JCS3910F | Unit |
| Drain-Source Voltage | VDSS | 100 | 100 | V |
| Drain Current -continuous (TC=25) | ID | 16* | 79 | A |
| Drain Current -continuous (TC=100) | ID | 12* | 47 | A |
| Drain Current - pulse (note 1) | IDM | 64* | - | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 153.6 | - | mJ |
| Avalanche Current (note 1) | IAR | 16 | - | A |
| Repetitive Avalanche Current (note 1) | EAR | 7.9 | - | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.1 | - | V/ns |
| Power Dissipation (TC=25) | PD | 79 | - | W |
| Power Dissipation (-Derate above 25) | - | 0.53 | 0.31 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+175 | -55+175 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 100 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.09 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS=30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS=-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=8.0A | - | 95 | 115 | m |
| Forward Transconductance | gfs | VDS = 40V, ID=16.0Anote 4 | - | 7.8 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 623 | 828 | pF |
| Output capacitance | Coss | - | - | 164 | 218 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 90 | 119 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | - | - | 7.1 | 9.4 | ns |
| Turn-On rise time | tr | - | - | 31 | 41 | ns |
| Turn-Off delay time | td(off) | - | - | 42 | 55 | ns |
| Turn-Off Fall time | tf | VDD=50V,ID=16A,RG=25 note 4,5 | - | 24 | 31 | ns |
| Total Gate Charge | Qg | - | - | 18.9 | 27 | nC |
| Gate-Source charge | Qgs | - | - | 4.1 | - | nC |
| Gate-Drain charge | Qgd | VDS =80V , ID=16A VGS =10V note 4,5 | - | 7.4 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 16 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 64 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=16A | - | - | 1.4 | V |
| Reverse recovery time | trr | - | - | 127 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=16A dIF/dt=100A/s (note 4) | - | 710 | - | nC |
Thermal Characteristics
| Parameter | Symbol | JCS3910V/R | JCS3910F | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.89 | 3.2 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 45.9 | /W |
2409280230_Jilin-Sino-Microelectronics-JCS3910R-DPAK_C272588.pdf
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