Silicon Planar Zener Diodes Including Jingdao Microelectronics 1SMA4739A for Surface Mount Technology
Key Attributes
Model Number:
1SMA4739A
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
5Ω
Zener Voltage(Range):
8.6V~9.59V
Pd - Power Dissipation:
1W
Zener Voltage(Nom):
9.1V
Mfr. Part #:
1SMA4739A
Package:
SMA
Product Description
Product Overview
Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a wide zener reverse voltage range from 3.3V to 330V and a maximum power dissipation of 1W. Their small plastic package (SMA) makes them suitable for compact electronic designs.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong Jingdao Microelectronics Co., LTD
- Material: Silicon Planar
- Package Type: SMA
Technical Specifications
| Type | Zener Voltage Range (V) Nom | IZT (mA) | ZZT Max () | IR Max (A) | IZM (mA) | VF Max (V) |
| 1SMA4728A | 3.3 | 75 | 100 | 100 | 1 | 3.10 |
| 1SMA4729A | 3.6 | 75 | 100 | 100 | 1 | 3.40 |
| 1SMA4730A | 3.9 | 75 | 100 | 100 | 1 | 3.70 |
| 1SMA4731A | 4.3 | 75 | 100 | 100 | 1 | 4.06 |
| 1SMA4732A | 4.7 | 70 | 95 | 100 | 1 | 4.50 |
| 1SMA4733A | 5.1 | 69 | 91 | 100 | 1 | 4.93 |
| 1SMA4734A | 5.6 | 64 | 86 | 50 | 1 | 5.40 |
| 1SMA4735A | 6.2 | 58 | 79 | 50 | 1 | 5.88 |
| 1SMA4736A | 6.8 | 53 | 71 | 50 | 1 | 6.56 |
| 1SMA4737A | 7.5 | 47 | 63 | 50 | 1 | 7.12 |
| 1SMA4738A | 8.2 | 44.9 | 58 | 50 | 1 | 7.79 |
| 1SMA4739A | 9.1 | 40.9 | 52 | 50 | 1 | 8.60 |
| 1SMA4740A | 10 | 37 | 47 | 50 | 1 | 9.50 |
| 1SMA4741A | 11 | 34 | 43 | 50 | 1 | 10.4 |
| 1SMA4742A | 12 | 31 | 38 | 50 | 1 | 11.4 |
| 1SMA4743A | 13 | 28 | 35 | 50 | 1 | 12.4 |
| 1SMA4744A | 15 | 25 | 31 | 50 | 1 | 13.8 |
| 1SMA4745A | 16 | 23 | 28 | 50 | 1 | 15.2 |
| 1SMA4746A | 18 | 21 | 26 | 50 | 1 | 16.8 |
| 1SMA4747A | 20 | 19 | 24 | 50 | 1 | 19.0 |
| 1SMA4748A | 22 | 17 | 21 | 50 | 1 | 20.8 |
| 1SMA4749A | 24 | 16 | 19 | 50 | 1 | 22.8 |
| 1SMA4750A | 27 | 14 | 17 | 50 | 1 | 25.3 |
| 1SMA4751A | 30 | 13 | 15 | 50 | 1 | 28.2 |
| 1SMA4752A | 33 | 12 | 13 | 50 | 1 | 31.3 |
| 1SMA4753A | 36 | 11 | 12 | 50 | 1 | 34.2 |
| 1SMA4754A | 39 | 10 | 11 | 50 | 1 | 37.2 |
| 1SMA4755A | 43 | 9.5 | 10 | 50 | 1 | 40.9 |
| 1SMA4756A | 47 | 8.5 | 9.0 | 50 | 1 | 45.6 |
| 1SMA4757A | 51 | 7.5 | 8.0 | 50 | 1 | 49.8 |
| 1SMA4758A | 56 | 7.0 | 7.0 | 50 | 1 | 54.0 |
| 1SMA4759A | 62 | 6.5 | 6.5 | 50 | 1 | 58.8 |
| 1SMA4760A | 68 | 5.0 | 5.5 | 50 | 1 | 64.6 |
| 1SMA4761A | 75 | 4.5 | 5.0 | 50 | 1 | 71.2 |
| 1SMA4762A | 82 | 4.0 | 4.5 | 50 | 1 | 77.9 |
| 1SMA4763A | 91 | 3.5 | 4.0 | 50 | 1 | 86.0 |
| 1SMA4764A | 100 | 3.1 | 3.7 | 50 | 1 | 96.0 |
| 1SMA4765A | 110 | 2.8 | 3.4 | 50 | 1 | 105 |
| 1SMA4766A | 120 | 2.5 | 3.1 | 50 | 1 | 116 |
| 1SMA4767A | 130 | 2.3 | 2.8 | 50 | 1 | 127 |
| 1SMA4768A | 150 | 2.0 | 2.5 | 50 | 1 | 140 |
| 1SMA4769A | 160 | 1.9 | 2.3 | 50 | 1 | 150 |
| 1SMA4770A | 170 | 1.7 | 2.0 | 50 | 1 | 157 |
| 1SMA4771A | 180 | 1.6 | 1.9 | 50 | 1 | 165 |
| 1SMA4772A | 190 | 1.4 | 1.7 | 50 | 1 | 175 |
| 1SMA4773A | 200 | 1.2 | 1.6 | 50 | 1 | 189 |
| 1SMA4774A | 220 | 1.0 | 1.4 | 50 | 1 | 209 |
| 1SMA4775A | 240 | 1.0 | 1.2 | 50 | 1 | 229 |
| 1SMA4776A | 250 | 1.0 | 1.0 | 50 | 1 | 249 |
| 1SMA4777A | 270 | 1.0 | 1.0 | 50 | 1 | 269 |
Absolute Maximum Ratings And Characteristics
| Parameter | Symbol | Value | Unit | Ta = 25 C |
| Power Dissipation at Tc = 75 C | PD | 1 | W | Max. |
| Forward Voltage at IF = 200 mA | VF | 1.2 | V | Max. |
| Junction Temperature Range | TJ | -55 to +150 | C | |
| Storage Temperature Range | TS | -55 to +150 | C |
2410231749_Jingdao-Microelectronics-1SMA4739A_C5288817.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
