N channel transistor Jilin Sino Microelectronics JCS4N80VC IPAK designed for avalanche performance
Key Attributes
Model Number:
JCS4N80VC-IPAK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
4W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
JCS4N80VC-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS4N80C is a N-channel enhancement mode field-effect transistor designed for applications such as switched-mode power supplies and electronic ballasts. It features low gate charge, low Crss (typical 8.8pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | Main Characteristics (ID) | Main Characteristics (VDSS) | Main Characteristics (Rdson-max @Vgs=10V) | Main Characteristics (Qg-typ) |
| JCS4N80VC-V-B / JCS4N80VC-V-BR | N/A | IPAK | 4A | 800V | 2.6 | 29.5nC |
| JCS4N80RC-R-B / JCS4N80RC-R-BR / JCS4N80RC-R-A / JCS4N80RC-R-AR | N/A | DPAK | 4A | 800V | 2.6 | 29.5nC |
| JCS4N80FC-F-B / JCS4N80FC-F-BR | N/A | TO-220MF | 4A | 800V | 2.6 | 29.5nC |
| JCS4N80CC-C-B / JCS4N80CC-C-BR | N/A | TO-220C | 4A | 800V | 2.6 | 29.5nC |
| JCS4N80BC-B-B / JCS4N80BC-B-BR | N/A | TO-262 | 4A | 800V | 2.6 | 29.5nC |
| JCS4N80VC-V5-B / JCS4N80VC-V5-BR | N/A | IPAK-WS2 | 4A | 800V | 2.6 | 29.5nC |
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 800 | V | |
| Continuous Drain Current | ID (Tc=25) | 4 | A | Drain current limited by maximum junction temperature |
| Continuous Drain Current | ID (Tc=100) | 2.48 | A | Drain current limited by maximum junction temperature |
| Pulse Drain Current | IDM | 16 | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 470 | mJ | Note 2 |
| Avalanche Current | IAR | 4.0 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 13 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 4.0 | V/ns | Note 3 |
| Power Dissipation (TC=25) | PD | 99.2 | W | |
| Power Dissipation Derate above 25 | - | 0.79 | W/ | For JCS4N80CC/BC |
| Power Dissipation (TC=25) | PD | 38.2 | W | For JCS4N80FC |
| Power Dissipation Derate above 25 | - | 0.31 | W/ | For JCS4N80FC |
| Power Dissipation (TC=25) | PD | 45.8 | W | For JCS4N80VC/RC |
| Power Dissipation Derate above 25 | - | 0.37 | W/ | For JCS4N80VC/RC |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 800 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.95 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=800V,VGS=0V, TC=25 | - | - | 5 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=640V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 1.9 | 2.6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | 3.3 | 4.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | 4.9 | 6.5 | |
| Forward Transconductance | gfs | VDS = 50V, ID=2.0Anote 4 | - | 3.8 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain | - | - | 6.0 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 675 | 880 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 78 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 8.8 | 15 | pF |
| Turn-On delay time | td(on) | VDD=400V,ID=4A,RG=25 note 45 | - | 18 | 40 | ns |
| Turn-On rise time | tr | VDD=400V,ID=4A,RG=25 note 45 | - | 48 | 100 | ns |
| Turn-Off delay time | td(off) | VDD=400V,ID=4A,RG=25 note 45 | - | 39 | 80 | ns |
| Turn-Off Fall time | tf | VDD=400V,ID=4A,RG=25 note 45 | - | 38 | 80 | ns |
| Total Gate Charge | Qg | VDS =640V , ID=4A VGS =10V note 45 | - | 29.5 | 45 | nC |
| Gate-Source charge | Qgs | VDS =640V , ID=4A VGS =10V note 45 | - | 4.8 | 12.0 | nC |
| Gate-Drain charge | Qgd | VDS =640V , ID=4A VGS =10V note 45 | - | 12.8 | 30.0 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4A | - | - | 1.5 | V |
| Reverse recovery time | trr | VGS=0V, IS=4A dIF/dt=100A/s (note 4) | - | 580 | 1500 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4A dIF/dt=100A/s (note 4) | - | 3.8 | 9.0 | C |
2409280032_Jilin-Sino-Microelectronics-JCS4N80VC-IPAK_C272572.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
