Fast switching MOSFET Jilin Sino Microelectronics JCS9N50FC 220MF with low Crss and RoHS compliance
Key Attributes
Model Number:
JCS9N50FC-220MF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 N-channel
Output Capacitance(Coss):
192pF
Input Capacitance(Ciss):
1.12nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
JCS9N50FC-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS9N50C is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speeds, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS9N50VC-V-B / JCS9N50VC-V-BR | N/A | IPAK | 9 | 500 | 0.75 | 29 |
| JCS9N50RC-R-B / JCS9N50RC-R-BR | N/A | DPAK | 9 | 500 | 0.75 | 29 |
| JCS9N50CC-C-B / JCS9N50CC-C-BR | N/A | TO-220C | 9 | 500 | 0.75 | 29 |
| JCS9N50FC-F-B / JCS9N50FC-F-BR | N/A | TO-220MF | 9 | 500 | 0.75 | 29 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 500 | V |
| Continuous Drain Current (Tc=25) | ID | 9 | A |
| Continuous Drain Current (Tc=100) | ID* | 5.7 | A |
| Pulse Drain Current (note 1) | IDM | 36* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 365 | mJ |
| Avalanche Current (note 1) | IAR | 9 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 4.6 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.4 | V/ns |
| Power Dissipation (TC=25) | PD | 60 / 130 / 45 | W |
| Derate above 25 | 0.32 / 1.08 / 0.36 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.5A | - | 0.62 | 0.75 | |
| Forward Transconductance | gfs | VDS = 40V, ID=4.5Anote 4 | - | 6.2 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 870 | 1120 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 155 | 192 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 26 | 34 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=9A,RG=25 note 45 | - | 66 | 85 | ns |
| Turn-On rise time | tr | VDD=250V,ID=9A,RG=25 note 45 | - | 53 | 69 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=9A,RG=25 note 45 | - | 101 | 134 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=9A,RG=25 note 45 | - | 66 | 92 | ns |
| Total Gate Charge | Qg | VDS =400V , ID=9A VGS =10V note 45 | - | 29 | 36 | nC |
| Gate-Source charge | Qgs | VDS =400V , ID=9A VGS =10V note 45 | - | 4.3 | - | nC |
| Gate-Drain charge | Qgd | VDS =400V , ID=9A VGS =10V note 45 | - | 13 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 9 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 36 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=9A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=9A dIF/dt=100A/s (note 4) | - | 331 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=9A dIF/dt=100A/s (note 4) | - | 2.92 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.1 / 0.96 / 2.8 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS9N50FC-220MF_C272550.pdf
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