N channel MOSFET Jilin Sino Microelectronics JCS4N60FB 220MF suitable for high frequency power supplies
Key Attributes
Model Number:
JCS4N60FB-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
124pF
Pd - Power Dissipation:
41.92W
Mfr. Part #:
JCS4N60FB-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS4N60B is a N-channel enhancement mode MOSFET designed for high-frequency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics co., Ltd
- Certifications: RoHS
- Origin: China
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson (Vgs=10V) () | Qg (nC) |
| JCS4N60VB-V-B / JCS4N60VB-V-BR | JCS4N60VB | IPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60RB-R-B / JCS4N60RB-R-BR / JCS4N60RB-R-A / JCS4N60RB-R-AR | JCS4N60RB | DPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60BB-B-B / JCS4N60BB-B-BR | JCS4N60BB | TO-262 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60SB-S-B / JCS4N60SB-S-BR / JCS4N60SB-S-A / JCS4N60SB-S-AR | JCS4N60SB | TO-263 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60CB-C-B / JCS4N60CB-C-BR | JCS4N60CB | TO-220C | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F-B / JCS4N60FB-F-BR | JCS4N60FB | TO-220MF | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F2-B / JCS4N60FB-F2-BR | JCS4N60FB | TO-220MF-K2 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60VB-V2-B / JCS4N60VB-V2-BR | JCS4N60VB | IPAK-S2 | 4.0 | 600 | 2.4 | 18.1 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 600 | V | |
| Continuous Drain Current | ID | 4.0* | A | T=25, limited by maximum junction temperature |
| Continuous Drain Current | ID | 2.5* | A | T=100, limited by maximum junction temperature |
| Pulsed Drain Current | IDM | 16* | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 610.9 | mJ | Note 2 |
| Avalanche Current | IAR | 4.0 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 15.0 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | Note 3 |
| Power Dissipation | PD | 165.56 (IPAK/IPAK-S2) / 193.20 (DPAK) / 41.92 (TO-262) / 27.61 (TO-263) / 165.56 (TO-220C) / 41.92 (TO-220MF) / 27.61 (TO-220MF-K2) | W | TC=25, Derate above 25: 1.32 (IPAK/IPAK-S2) / 1.55 (DPAK) / 0.34 (TO-262) / 0.22 (TO-263) / 1.32 (TO-220C) / 0.34 (TO-220MF) / 0.22 (TO-220MF-K2) W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2A | - | 1.7 | 2.4 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2A (note 4) | - | 4.3 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 702 | 1100 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 89 | 124 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2.69 | 12 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 9.8 | 20 | ns |
| Turn-On rise time | tr | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 23.7 | 50 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 33.5 | 70 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 25.8 | 55 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 13.3 | 28 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 3.6 | 10 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 4.9 | 12 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4.0 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 383 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 1.85 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max Unit | JCS4N60 VB/RB | JCS4N60 CB/SB/BB | JCS4N60 FB(TO-220MF) | JCS4N60FB(TO-220MF-K2) |
| Thermal Resistance, Junction to Case | Rth(j-c) | /W | 0.755 | 0.647 | 2.982 | 4.528 |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | /W | 80.25 | 60.18 | 46.22 | 49.62 |
Notes
- Pulse width limited by maximum junction temperature
- L=70mH, IAS=4.0A, VDD=50V, RG=25 ,Starting TJ=25
- ISD 4.0A,di/dt 200A/s,VDDBVDSS, Starting TJ=25
- Pulse Test: Pulse Width 300s, Duty Cycle2%
- Essentially independent of operating temperature
2411201841_Jilin-Sino-Microelectronics-JCS4N60FB-220MF_C272516.pdf
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