Voltage Regulation with Jingdao Microelectronics BZT52C27S Silicon Planar Zener Diodes in Compact Package
Key Attributes
Model Number:
BZT52C27S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
25.1V~28.9V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
27V
Mfr. Part #:
BZT52C27S
Package:
SOD-323
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.4V to 43V. These diodes offer a total power dissipation of up to 200mW and are ideally suited for automated assembly processes due to their SOD-323 package.
Product Attributes
- Brand: Jingdao Microelectronics ()
- Origin: China
Technical Specifications
| Type | Zener Voltage Nom. (V) | Zener Voltage Min. (V) | Zener Voltage Max. (V) | Test Current IZT (mA) | Maximum Zener Impedance ZZT (@ IZT) () | Maximum Reverse Current IR (@ VR) (A) | Typical Temperature Coefficient @IZTC (mV/) | Test Current IZTC (mA) |
| BZT52C2V4S | 2.4 | 2.6 | 2.9 | 5 | 600 | 100 | -3.5 | 1 |
| BZT52C2V7S | 2.7 | 2.9 | 3.2 | 5 | 600 | 100 | -3.5 | 1 |
| BZT52C3V0S | 3.0 | 3.2 | 3.5 | 5 | 600 | 95 | -3.5 | 1 |
| BZT52C3V3S | 3.3 | 3.5 | 3.8 | 5 | 600 | 95 | -3.5 | 1 |
| BZT52C3V6S | 3.6 | 3.8 | 4.1 | 5 | 600 | 90 | -3.5 | 1 |
| BZT52C3V9S | 3.9 | 4.1 | 4.6 | 5 | 600 | 90 | -3.5 | 1 |
| BZT52C4V3S | 4.3 | 4.6 | 5.0 | 5 | 600 | 90 | -3.5 | 1 |
| BZT52C4V7S | 4.7 | 5.0 | 5.4 | 5 | 500 | 80 | -3.5 | 1 |
| BZT52C5V1S | 5.1 | 5.4 | 5.9 | 5 | 480 | 60 | -2.7 | 1 |
| BZT52C5V6S | 5.6 | 6.0 | 6.5 | 5 | 400 | 40 | -2 | 1 |
| BZT52C6V2S | 6.2 | 6.6 | 7.2 | 5 | 150 | 10 | 0.4 | 1 |
| BZT52C6V8S | 6.8 | 7.2 | 7.8 | 5 | 80 | 5 | 1.2 | 1 |
| BZT52C7V5S | 7.5 | 7.9 | 8.6 | 5 | 80 | 3 | 2.5 | 1 |
| BZT52C8V2S | 8.2 | 8.7 | 9.4 | 5 | 80 | 3 | 3.2 | 1 |
| BZT52C9V1S | 9.1 | 9.6 | 10.5 | 5 | 100 | 3 | 3.8 | 1 |
| BZT52C10S | 10 | 10.6 | 11.5 | 5 | 150 | 3 | 4.5 | 1 |
| BZT52C11S | 11 | 11.6 | 12.7 | 5 | 150 | 3 | 5.4 | 1 |
| BZT52C12S | 12 | 12.7 | 14.1 | 5 | 150 | 2 | 6 | 1 |
| BZT52C13S | 13 | 14.1 | 15.6 | 5 | 170 | 1 | 7 | 1 |
| BZT52C15S | 15 | 15.6 | 17.1 | 5 | 200 | 0.7 | 9.2 | 1 |
| BZT52C16S | 16 | 17.1 | 18.9 | 5 | 200 | 0.5 | 10.4 | 1 |
| BZT52C18S | 18 | 19.1 | 21.2 | 5 | 225 | 0.2 | 12.4 | 1 |
| BZT52C20S | 20 | 21.2 | 23.3 | 5 | 225 | 0.1 | 14.4 | 1 |
| BZT52C22S | 22 | 23.3 | 25.6 | 5 | 250 | 0.1 | 16.4 | 1 |
| BZT52C24S | 24 | 25.6 | 28.9 | 5 | 250 | 0.1 | 18.4 | 1 |
| BZT52C27S | 27 | 28.9 | 32.0 | 2 | 300 | 0.1 | 21.4 | 0.5 |
| BZT52C30S | 30 | 32.0 | 35.0 | 2 | 300 | 0.1 | 24.4 | 0.5 |
| BZT52C33S | 33 | 35.0 | 38.0 | 2 | 325 | 0.1 | 27.4 | 0.5 |
| BZT52C36S | 36 | 38.0 | 41.0 | 2 | 350 | 0.1 | 30.4 | 0.5 |
| BZT52C39S | 39 | 41.0 | 45.0 | 2 | 350 | 0.1 | 33.4 | 0.5 |
| BZT52C43S | 43 | 46.0 | 50.0 | 2 | 350 | 0.1 | 37.4 | 0.5 |
Additional Technical Data
| Parameter | Symbol | Value | Unit |
| Total power dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
| Typical thermal resistance junction to ambient | RJA | 625 | C/W |
2409301403_Jingdao-Microelectronics-BZT52C27S_C353543.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
