Glass passivated bridge rectifier Jingdao Microelectronics UM10B-10 designed for high frequency surface mount
Key Attributes
Model Number:
UM10B-10
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
-
Voltage - Forward(Vf@If):
-
Current - Rectified:
-
Voltage - DC Reverse(Vr):
-
Mfr. Part #:
UM10B-10
Package:
UMB
Product Description
Product Overview
This 1A surface mount glass passivated bridge rectifier, housed in a UMB package, is designed for high-frequency applications. It offers a high surge current capability and is ideal for surface mount designs. Available with reverse voltage ratings from 100V to 1000V.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Package: UMB
Technical Specifications
| Model | Max. DC Blocking Voltage (V) | Max. RMS Voltage (V) | Average Rectified Output Current (A) | Peak Forward Surge Current (A) | Max. Forward Voltage (V) @ 1.0A | Typical Junction Capacitance (pF) | Operating & Storage Temp (C) |
| UM1B-10 | 100 | 70 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| UM2B-10 | 200 | 140 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| UM4B-10 | 400 | 280 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| UM6B-10 | 600 | 420 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| UM8B-10 | 800 | 560 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| UM10B-10 | 1000 | 700 | 1.0 | 7 | 1.1 | 5 | -55 ~ +150 |
| Parameter | Symbol | Value | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 to 1000 | V |
| Maximum RMS voltage | VRMS | 70 to 700 | V |
| Average Rectified Output Current @ Fig.1 | IO | 1.0 | A |
| Peak Forward Surge Current 8.3 ms Single Half Sine Wave | IFSM | 70 | A |
| Peak Forward Surge Current 1.0 ms Single Half Sine Wave | IFSM | 70 | A |
| Rating for fusing (t8.3ms) | 2I t | 5.1 | AS |
| Maximum Forward Voltage at 1.0 A | VF | 1.1 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ T =25 C | IR | 10 | A |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ T =125 C | IR | 40 | A |
| Typical Junction Capacitance (Note1) | Cj | 5 | pF |
| Operating and Storage Temperature Range | Tj stg | -55 ~ +150 | C |
2511061531_Jingdao-Microelectronics-UM10B-10_C108842.pdf
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