N channel MOSFET transistor Jingdao Microelectronics D3R6N30 optimized for inverter and UPS power management
Key Attributes
Model Number:
D3R6N30
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
3.6mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
206pF
Pd - Power Dissipation:
82W
Input Capacitance(Ciss):
2.414nF@25V
Gate Charge(Qg):
13nC
Mfr. Part #:
D3R6N30
Package:
TO-252W
Product Description
Product Overview
The D3R6N30 is an N-channel enhanced MOS field-effect transistor from Jingdao Microelectronics. It features advanced technology and cell structure, offering low on-resistance, excellent switching performance, and high avalanche breakdown withstand voltage. This product is widely used in uninterruptible power supply and power management fields of inverter systems.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Model: D3R6N30
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current | ID | 80 | A | Tc=25°C |
| Continuous Drain Current | ID | 57 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 320 | A | Note 2 |
| Power Dissipation | PD | 82 | W | Tc=25°C |
| Power Dissipation | PD | 3.6 | W | RthJA=63°C/W |
| Avalanche Energy Single Pulsed | EAS | 144 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250µA |
| Gate Threshold Voltage | VGS(TH) | 1.2 | V | VDS=VGS,ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 3.6 | mΩ | VGS=10V,ID=20A |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±20V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=30V,VGS=0V |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 2414 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 206 | pF | |
| Reverse Transfer Capacitance | CRSS | 268 | pF | |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 36 | nC | VDS=24V,VGS=10V, ID=80A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 16 | nC | |
| Gate-Source Charge | QGS | 22 | nC | |
| Turn-On Delay Time | tD(ON) | 7 | ns | VDS=15V,VGS=10V, ID=80A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 13 | ns | |
| Turn-Off Delay Time | tD(OFF) | 22 | ns | |
| Turn-Off Fall Time | tF | 80 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 80 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 320 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=40A,VGS=0V |
| Reverse Recovery Time | trr | 250 | ns | IS=40A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | µC | IS=40A,VGS=0V, di/dt=100A/us |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 1.52 | °C/W | Tc=25°C |
2208301630_Jingdao-Microelectronics-D3R6N30_C5156807.pdf
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