switching MOSFET Jingdao Microelectronics F5N50 N channel power device for power supply and adaptor
Key Attributes
Model Number:
F5N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Input Capacitance(Ciss):
530pF
Output Capacitance(Coss):
63pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
F5N50
Package:
ITO-220ABW
Product Description
Product Overview
The F5N50 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Model: F5N50
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions | Note |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | VDSS | 500 | V | ||
| Gate-Source Voltage | VGSS | ±30 | V | ||
| Continuous Drain Current | ID | 5 | A | Tc=25 | |
| 3.2 | A | Tc=100 | |||
| Pulsed Drain Current | IDM | 20 | A | 2 | |
| Power Dissipation | PD | 45 | W | ||
| Single Pulsed Avalanche Energy | EAS | 310 | mJ | 3 | |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | 4 | |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | ||
| THERMAL DATA | |||||
| Junction to Ambient | RthJA | 63 | °C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. | |
| Junction to Case | RthJC | 2.76 | °C/W | ||
| ELECTRICAL CHARACTERISTICS | |||||
| OFF CHARACTERISTICS | |||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V,ID=250uA | |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=-30V,VDS=0V | |
| Drain-Source Leakage Current | IDSS | 50 | uA | VDS=500V,VGS=0V | |
| ON CHARACTERISTICS | |||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | Ω | VGS=10V,ID=2.5A | |
| 1.3 | Ω | VGS=10V,ID=5A | |||
| DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance | CISS | 530 | pF | VDS=25V, VGS=0V, f=1.0MHz | |
| Output Capacitance | COSS | 63 | pF | VDS=25V, VGS=0V, f=1.0MHz | |
| Reverse Transfer Capacitance | CRSS | 5 | pF | VDS=25V, VGS=0V, f=1.0MHz | |
| Total Gate Charge | QG | 14 | nC | VDS=400V,VGS=10V, ID=10A,IG=1mA | 1,2 |
| Gate-Drain Charge | QGD | 2 | nC | VDS=400V,VGS=10V, ID=10A,IG=1mA | 1,2 |
| Gate-Source Charge | QGS | 4 | nC | VDS=400V,VGS=10V, ID=10A,IG=1mA | 1,2 |
| Turn-On Delay Time | tD(ON) | 8 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω | 1,2 |
| Turn-On Rise Time | tR | 36 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω | 1,2 |
| Turn-Off Delay Time | tD(OFF) | 16 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω | 1,2 |
| Turn-Off Fall Time | tF | 10 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω | 1,2 |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | |||||
| Maximum Body-Diode Continuous Current | IS | 5 | A | ||
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | ||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=10A,VGS=0V | 1 |
| Reverse Recovery Time | trr | 180 | ns | IS=10A,VGS=0V, di/dt=100A/us | |
| Reverse Recovery Charge | Qrr | 1.9 | uC | IS=10A,VGS=0V, di/dt=100A/us | |
2412111838_Jingdao-Microelectronics-F5N50_C7469037.pdf
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