N Channel Power MOSFET Jingdao Microelectronics F5N50L Suitable for High Speed Switching and Adaptors
Key Attributes
Model Number:
F5N50L
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.6Ω@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
66pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
564pF@25V
Gate Charge(Qg):
17nC@400V
Mfr. Part #:
F5N50L
Package:
TO-220F-3L
Product Description
Product Overview
The F5N50L is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics, making it suitable for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 500 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 5 | A | TC=25°C |
| Continuous Drain Current | ID | 3.2 | A | TC=100°C |
| Pulsed Drain Current (Note 2) | IDM | 20 | A | |
| Power Dissipation (Note 1) | PD | 45 | W | TC=25°C |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 112 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
| Operating junction and storage temperature | Tj,Tstg | -55 ~ +150 | °C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal resistance, junction – case | RthJC | 4 | °C/W | |
| Thermal resistance, junction – ambient(min. footprint) | RthJA | 63 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V, ID=250µA |
| Gate-Source Leakage Current | IGSS | ±1.0 | µA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 500 | µA | VDS=500V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | Ω | VGS=10V, ID=2.5A |
| Forward Transconductance | gFS | 3.3 | S | VDS=15V, ID=2.5A |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 17 | nC | VDS=400V, VGS=10V, ID=5A |
| Gate-Drain Charge | QGD | 4.0 | nC | |
| Gate-Source Charge | QGS | 8 | nC | |
| Turn-On Delay Time | tD(ON) | 11 | ns | |
| Turn-On Rise Time | tR | 28 | ns | |
| Turn-Off Delay Time | tD(OFF) | 36 | ns | |
| Turn-Off Fall Time | tF | 26 | ns | |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 564 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 66 | pF | |
| Reverse Transfer Capacitance | CRSS | 12 | pF | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ISD=5A, VGS=0V |
| Maximum Body-Diode Continuous Current | IS | 5 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | |
| Reverse Recovery Time | trr | 319 | ns | IF=5A, di/dt=100A/μs, VGS=0V |
| Reverse Recovery Charge | Qrr | 3.9 | µC | |
2305040947_Jingdao-Microelectronics-F5N50L_C5632446.pdf
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