P Channel MOSFET JingYang TPM2020UX Designed for Load Switch and Battery Protection Applications
Key Attributes
Model Number:
TPM2020UX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
13A
RDS(on):
14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
362pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2.05nF@10V
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
TPM2020UX
Package:
SOP-8
Product Description
Product Overview
P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). Designed for high-speed switching applications including battery protection, load switch, and power management.
Product Attributes
- Brand: JY Electronics (implied from website)
- Origin: China (implied from website)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V,TC=25 | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 10V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -0.4 | -0.62 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-10A | 14 | 18 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-6.5A | 17 | 22 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -1.8V, ID=-4.0A | 21 | 31 | ||
| Diode Forward Voltage | VSD | IS=-13A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -13 | A | |||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHZ | 2050 | pF | ||
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHZ | 411 | |||
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHZ | 362 | |||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-9.1A | 30 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V,VDS=-15V,ID=-9.1A | 5.3 | |||
| Gate Drain Charge | Qg d | VGS=-10V,VDS=-15V,ID=-9.1A | 7.6 | |||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5 | 14 | ns | ||
| Turn-on Rise Time | tr | VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5 | 20 | |||
| Turn-off Delay Time | tD(off) | VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5 | 95 | |||
| Turn-off Fall Time | tf | VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5 | 65 | |||
| Drain-source Voltage | VDS | -20 | V | |||
| Gate-source Voltage | VGS | 10 | V | |||
| Drain Current (TA=25 @ Steady State) | ID | -13 | A | |||
| Drain Current (TA=70 @ Steady State) | ID | -10.4 | A | |||
| Pulsed Drain Current | IDM | -55 | A | |||
| Total Power Dissipation (@ TA=25) | PD | 3.0 | W | |||
| Junction-to-Ambient Thermal Resistance (@ Steady State) | RJA | 42 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2405091033_JingYang-TPM2020UX_C5364040.pdf
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