Surface mount P channel MOSFET for computers printers and telephones featuring JingYang SI2301 loss
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
37.6pF@6V
Input Capacitance(Ciss):
660.8pF@6V
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
6.396nC@5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Copper leadframe
- Color: Not specified
- Certifications: ROHS compliant
- MSL: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Limits | Unit |
| P-Channel 20-V (D-S) MOSFET Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | TA=25oC | -2.8 | A |
| Continuous Drain Current | ID | TA=70oC | -2.1 | A |
| Pulsed Drain Current | IDM | -10 | A | |
| Continuous Source Current (Diode Conduction) | Is | -1 | A | |
| Power Dissipation | PD | TA=25oC | 1.38 | W |
| Linear Derating Factor | 0.01 | W/OC | ||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | OC | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 90 | OC/W | |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =12V | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS = -20 V, VGS = 0 V, TJ = 25oC | -1 | uA |
| Drain-Source Leakage Current | IDSS | VDS = -16 V, VGS = 0 V, TJ = 55oC | -10 | uA |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5 V, ID = -2.8 A | 100 | m |
| Drain-Source On-Resistance | RDS(on) | VGS = -2.5 V, ID = -2.0 A | 150 | m |
| Drain-Source On-Resistance | RDS(on) | VGS = -1.8 V, ID = -2.0 A | 170 | m |
| Diode Forward On Voltage | VSD | IS = -1.6 A, VGS = 0 V | -1.2 | V |
| Total Gate Charge | Qg | VDS = -6V, VGS = -5V, ID = -2.8A | 6.396 | nC |
| Gate-Source Charge | Qgs | 2.24 | ||
| Gate-Drain Charge | Qg | 1.05 | ||
| Turn-On Delay Time | td(on) | VDS=-15V, RD=15, RG = 6, VGS = -10V | 7.05 | ns |
| Turn-On Rise Time | tr | 9.836 | ||
| Turn-Off Delay Time | td(off) | 23.396 | ||
| Turn-Off Fall Time | tf | 7.692 | ||
| Input Capacitance | Ciss | VGS=0V,VDS=-6V,f =1.0MHz | 660.8 | pF |
| Output Capacitance | Coss | 110.4 | ||
| Reverse Transfer Capacitance | Crss | 37.6 |
2409291808_JingYang-SI2301_C2689812.pdf
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