Power MOSFET JingYang TNM3020JX with Low Gate Voltage Threshold and High Current Handling Capability
Key Attributes
Model Number:
TNM3020JX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
RDS(on):
18mΩ@4.5V;23mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
500pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
TNM3020JX
Package:
DFN2x2-6L
Product Description
Product Overview
The TNM3020JX is an N-Channel Trench Power MOSFET featuring excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. It offers high power and current handling capabilities, making it suitable for battery protection and other switching applications. This lead-free product is available in a DFN2x2-6L surface mount package.
Product Attributes
- Brand: JY Electronics (implied by website)
- Origin: China (implied by website)
- Certifications: Lead-free product is acquired
Technical Specifications
| Device | VDS (V) | ID (A) | RDS(ON) @ VGS=4.5V (m) | RDS(ON) @ VGS=2.5V (m) | Package | Application |
| TNM3020JX | 20 | 8 | < 26 | < 34 | DFN2x2-6L | Battery protection, Load switch, Power management |
2405091033_JingYang-TNM3020JX_C7434077.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
