Schottky Diode JSCJ BAT46WS Featuring 750mA Surge Current and Thermal Resistance Junction to Ambient

Key Attributes
Model Number: BAT46WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
750mA
Reverse Leakage Current (Ir):
2uA@75V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
1V@250mA
Current - Rectified:
150mA
Mfr. Part #:
BAT46WS
Package:
SOD-323
Product Description

Product Overview

The BAT46WS is a Schottky barrier diode featuring high breakdown voltage, low turn-on voltage, and guard ring construction for transient protection. It is suitable for circuit protection applications.

Product Attributes

  • Marking: S9
  • Package: SOD-323
  • Molding Compound: Green (if solid dot present)
  • Manufacturer: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Technical Specifications

ParameterSymbolLimit/ConditionsUnit
Peak repetitive peak reverse voltageVRRM100V
Working peak reverse voltageVRWM100V
DC blocking voltageVR100V
Forward continuous currentIF150mA
Repetitive peak forward current (Note 1) @ tp < 1.0s, Duty Cycle < 50%IFRM350mA
Non-repetitive Peak Forward surge current @ t = 8.3msIFSM750mA
Power dissipationPD200mW
Thermal resistance junction to ambient airRJA500/W
Operating Junction Temperature RangeTj-40 ~ +125
Storage Temperature RangeTSTG-55 ~ +150
Reverse breakdown voltage (Note 2) @ IR= 100AVR100V
Reverse voltage leakage current @ VR1=1.5VIR0.3A
Reverse voltage leakage current @ VR2=10VIR0.5A
Reverse voltage leakage current @ VR3=50VIR1A
Reverse voltage leakage current @ VR4=75VIR2A
Forward voltage @ IF1=0.1mAVF0.25V
Forward voltage @ IF2=10mAVF0.45V
Forward voltage @ IF3=250mAVF1V
Diode capacitance @ VR=0, f=1MHzCT20pF
Diode capacitance @ VR=1V, f=1MHzCT12pF

2410121931_JSCJ-BAT46WS_C2991954.pdf

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