Plastic Encapsulated Diode JSCJ B5817WS SJ Schottky Barrier Type for High Frequency Inverter Circuits
Key Attributes
Model Number:
B5817WS SJ
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@20V
Non-Repetitive Peak Forward Surge Current:
9A
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
450mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5817WS SJ
Package:
SOD-323
Product Description
Product Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD presents the SOD-323 Plastic-Encapsulate Diodes, specifically the B5817WS-5819WS Schottky Barrier Diode series. These diodes are designed for low voltage, high frequency inverters, free-wheeling, and polarity protection applications, offering efficient performance in demanding electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-323
- Type: Schottky Barrier Diode
- Material: Plastic-Encapsulated
Technical Specifications
| Parameter | Symbol | B5817WS | B5818WS | B5819WS | Unit |
| Maximum Ratings and Electrical Characteristics | VRM | 20 | 30 | 40 | V |
| VRRM, VRWM, VR | 20 | 30 | 40 | V | |
| VR(RMS) | 14 | 21 | 28 | V | |
| IO | 1 | A | |||
| IFSM (@t=8.3ms) | 9 | A | |||
| Repetitive peak forward current | IFRM | 1.5 | A | ||
| Power dissipation | Pd | 250 | mW | ||
| Thermal resistance junction to ambient | RJA | 400 | /W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | V(BR) (IR= 1mA) | 20 | 30 | 40 | V |
| IR (VR=20V/30V/40V) | 1 | 1 | 1 | mA | |
| CD (VR=4V, f=1MHz) | 120 | pF | |||
| Forward Voltage (VF) | @IF=1A | 0.45 | 0.55 | 0.6 | V |
| @IF=3A | 0.75 | 0.875 | 0.9 | V | |
| Test Conditions | B5817WS | B5818WS | B5819WS | Unit | |
| Storage Temperature | TSTG | -55~+150 | |||
| Junction Temperature | TJ | 125 | |||
2410121317_JSCJ-B5817WS-SJ_C22623.pdf
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